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◎ SEMIHOW REV.A0, December 2014 HRS80N08K BVDSS = 80 V RDS(on) typ = 6.7mΩ ID = 120 A

FEATURES

80V N-Channel Trench MOSFET  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 60nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 6.7 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Thermal Resistance Characteristics Symbol Parameter Value Units VDSS Drain-Source Voltage 80 V ID Drain Current – Continuous (TC = 25℃) 120 * A Drain Current – Continuous (TC = 100℃) 84 * A IDM Drain Current – Pulsed (Note 1) 420 * A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 500 mJ EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ PD Power Dissipation (TC = 25℃) - Derate above 25℃ 85 W

0.57 W/℃

TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 1.8 ℃/W RθJA Junction-to-Ambient -- 62.5 * Drain current limited by maximum junction temperature 2 1 TO-220F

◎ SEMIHOW REV.A0, December 2014 HRS80N08K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 120 A ISM Pulsed Source-Drain Diode Forward Current -- -- 420 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 65 -- ㎱ Qrr Reverse Recovery Charge -- 110 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 80 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V -- -- 1 ㎂ IGSS Gate-Body Leakage Current VGS = ±25 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2900 -- ㎊ Coss Output Capacitance -- 500 -- ㎊ Crss Reverse Transfer Capacitance -- 190 -- ㎊ Rg Gate Resistance VGS = 0 V, VDS = 0 V, f = 1MHz -- 0.7 -- Ω Dynamic Characteristics td(on) Turn-On Time VDS = 40 V, ID = 30 A, RG = 6 Ω -- 40 -- ㎱ tr Turn-On Rise Time -- 40 -- ㎱ td(off) Turn-Off Delay Time -- 130 -- ㎱ tf Turn-Off Fall Time -- 35 -- ㎱ Qg Total Gate Charge VDS = 64 V, ID = 30 A, VGS = 10 V -- 60 -- nC Qgs Gate-Source Charge -- 13 -- nC Qgd Gate-Drain Charge -- 16 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.2 -- 3.8 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A -- 6.7 8.0 mΩ gFS Forward Transconductance VDS = 20, ID = 40 A -- 70 -- S Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=25A, VDD=30V, RG=25Ω, Starting TJ =25°C

Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Figure 4. Body Diode Forward Voltage Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000 Ciss = Cgs + Cgd (Cds = shorted)

◎ SEMIHOW REV.A0, December 2014 HRS80N08K Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D

◎ SEMIHOW REV.A0, December 2014 HRS80N08K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

◎ SEMIHOW REV.A0, December 2014 HRS80N08K Package Dimension 0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 φ3.18 ±0.20 TO-220F