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◎ SEMIHOW REV.A0,Jan 2015 HRS370N10K 2 1

FEATURES

60V N-Channel Trench MOSFET Jan 2015 1.Gate 2. Drain 3. Source TO-220F Absolute Maximum Ratings TC=25℃ unless otherwise specified Thermal Resistance Characteristics Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V ID Drain Current – Continuous (TC = 25℃) 25 * A Drain Current – Continuous (TC = 100℃) 17.5 * A IDM Drain Current – Pulsed (Note 1) 88 * A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 80 mJ EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ PD Power Dissipation (TC = 25℃) - Derate above 25℃ 45 W

0.3 W/℃

TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 3.1 ℃/W RθJA Junction-to-Ambient -- 62.5 * Drain current limited by maximum junction temperature BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V  100% Avalanche Tested

◎ SEMIHOW REV.A0,Jan 2015 HRS370N10K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 25 A ISM Pulsed Source-Drain Diode Forward Current -- -- 88 VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 12 A, VGS = 0 V diF/dt = 50 A/μs -- 55 -- ㎱ Qrr Reverse Recovery Charge -- 80 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 ㎂ IGSS Gate-Body Leakage Current VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2650 -- ㎊ Coss Output Capacitance -- 140 -- ㎊ Crss Reverse Transfer Capacitance -- 95 -- ㎊ Rg Gate Resistance VGS = 0 V, VDS = 0 V, f = 1MHz -- 1.2 -- Ω Dynamic Characteristics td(on) Turn-On Time VDS = 50 V, ID = 12 A, RG = 6 Ω -- 30 -- ㎱ tr Turn-On Rise Time -- 20 -- ㎱ td(off) Turn-Off Delay Time -- 110 -- ㎱ tf Turn-Off Fall Time -- 25 -- ㎱ Qg Total Gate Charge VDS = 80 V, ID = 12 A, VGS = 10 V -- 50 -- nC Qgs Gate-Source Charge -- 10 -- nC Qgd Gate-Drain Charge -- 13 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=11A, VDD=25V, RG=25Ω, Starting TJ =25°C VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.2 -- 3.8 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 12 A -- 30 37 mΩ gFS Forward Transconductance VDS = 20, ID = 12 A -- 90 -- S

◎ SEMIHOW REV.A0,Jan 2015 HRS370N10K Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D

◎ SEMIHOW REV.A0,Jan 2015 HRS370N10K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

◎ SEMIHOW REV.A0,Jan 2015 HRS370N10K Package Dimension 0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 φ3.18 ±0.20 TO-220F