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Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools UPS & Motor Control D G S Absolute Maximum Ratings TJ=25 unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ρ20 V ID Drain Current TC = 25 120 * A TC = 100 85 * A IDM Pulsed Drain Current 400 * A EAS Single Pulsed Avalanche Energy L=0.4mH 845 mJ PD Power Dissipation TC = 25 40 W TJ, TSTG Operating and Storage Temperature Range -55 to +175 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 3.7 /W RșJA Junction-to-Ambient -- 62.5 /W * Drain current limited by maximum junction temperature
Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 120 A ISM Pulsed Source-Drain Diode Forward Current -- -- 400 VSD Source-Drain Diode Forward Voltage I S = 20 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 20 A, VGS = 0 V diF/dt = 100 A/ȝV -- 120 -- Ꭸ Qrr Reverse Recovery Charge -- 380 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 150 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V -- -- 1 Ꮃ VDS = 150 V, TJ = 100 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 75 V, VGS = 0 V, f = 1.0 MHz -- 4770 -- Ꮔ Coss Output Capacitance -- 340 -- Ꮔ Crss Reverse Transfer Capacitance -- 92 -- Ꮔ Rg Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 0.7 -- Dynamic Characteristics td(on) Turn-On Time VDS = 75 V, ID = 20 A, RG = 10 -- 17 -- Ꭸ tr Turn-On Rise Time -- 56 -- Ꭸ td(off) Turn-Off Delay Time -- 30 -- Ꭸ tf Turn-Off Fall Time -- 28 -- Ꭸ Qg Total Gate Charge VDS = 75 V, ID = 20 A, VGS = 10 V -- 66 -- nC Qgs Gate-Source Charge -- 11 -- nC Qgd Gate-Drain Charge -- 24 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 20 A -- 8.8 10.5 m gFS Forward Transconductance V DS = 5 V, ID = 20 A -- 43 -- S
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D BVDSS t p VDD IAS VDS (t) ID (t) Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 ij ±0.20 {vTYYWmG TO-220FM TO-220F