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BVDSS =7 0 V RDS(on) typ =6 Pȍ ID =4 8 A Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) :6 . 0 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HRP75N07V 70V N-Channel Trench MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage 70 V ID Drain Current – Continuous (TC = 25) 48 A Drain Current – Continuous (TC = 100) 30 A IDM Drain Current – Pulsed (Note 1) 192 A VGS Gate-Source Voltage ρ25 V EAS Single Pulsed Avalanche Energy (Note 2) 810 mJ IAR Avalanche Current (Note 1) 48 A EAR Repetitive Avalanche Energy (Note 1) 4.8 mJ dv/dt Peak Diode Recovery dv/dt 15 V/ns PD Power Dissipation (TC = 25) - Derate above 25 125 W
1.0 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 1.Gate 2. Drain 3. Source December 2014 TO-220 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 1.0 /WRșCS Case-to-Sink 0.5 -- RșJA Junction-to-Ambient -- 62.5
Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 48 A ISM Pulsed Source-Drain Diode Forward Current -- -- 192 VSD Source-Drain Diode Forward Voltage I S = 48 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 48 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 3) -- 80 -- Ꭸ Qrr Reverse Recovery Charge -- 180 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 70 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 70 V, VGS = 0 V -- -- 1 Ꮃ VDS = 56 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 4000 5200 Ꮔ Coss Output Capacitance -- 350 455 Ꮔ Crss Reverse Transfer Capacitance -- 250 325 Ꮔ Dynamic Characteristics td(on) Turn-On Time VDS = 35 V, ID = 40 A, RG = 25 (Note 4,5) -- 75 160 Ꭸ tr Turn-On Rise Time -- 150 310 Ꭸ td(off) Turn-Off Delay Time -- 150 310 Ꭸ tf Turn-Off Fall Time -- 60 130 Ꭸ Qg Total Gate Charge VDS = 56 V, ID = 40 A, VGS = 10 V (Note 3,4) -- 80 105 nC Qgs Gate-Source Charge -- 20 -- nC Qgd Gate-Drain Charge -- 30 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A -- 6.0 7.5 m Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=450uH, IAS=48A, VDD=25V, RG=25:, Starting TJ =25qC 3. ISD$di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\\&\\FOH 5. Essentially Independent of Operating Temperature
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
9.19±0.20 ij ±0.20 9.90±0.20 2.80±0.20 3.02±0.20 2.54typ 6.50±0.20 0.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 4.50±0.20 0.50±0.20 2.40±0.20 2.54typ {vTYYWGOhPG
±0.20 2.74±0.20 0.81±0.20 1.27±0.20 1.27±0.20 4.57±0.20 0.40±0.20 2.67±0.20 9.14±0.20 ij ±0.20 2.54typ 2.54typ {vTYYWGOiPG Package Dimension