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◎ SEMIHOW REV.A0,December 2014 HRLP40N04K BVDSS = 40 V RDS(on) typ = 3.3mΩ ID = 130 A
FEATURES
40V N-Channel Trench MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 130 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.3 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 3.6 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested December 2014 1.Gate 2. Drain 3. Source TO-220 Absolute Maximum Ratings TC=25℃ unless otherwise specified Thermal Resistance Characteristics Symbol Parameter Value Units VDSS Drain-Source Voltage 40 V ID Drain Current – Continuous (TC = 25℃) 130 A Drain Current – Continuous (TC = 100℃) 90 A IDM Drain Current – Pulsed (Note 1) 300 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 1050 mJ EAR Repetitive Avalanche Energy (Note 1) 11.5 mJ PD Power Dissipation (TC = 25℃) - Derate above 25℃ 115 W
0.77 W/℃
TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 1.3 ℃/W RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5
◎ SEMIHOW REV.A0,December 2014 HRLP40N04K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 130 A ISM Pulsed Source-Drain Diode Forward Current -- -- 300 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 160 -- ㎱ Qrr Reverse Recovery Charge -- 160 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 40 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V -- -- 1 ㎂ IGSS Gate-Body Leakage Current VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 5400 -- ㎊ Coss Output Capacitance -- 620 -- ㎊ Crss Reverse Transfer Capacitance -- 450 -- ㎊ Rg Gate Resistance VGS = 0 V, VDS = 0 V, f = 1MHz -- 1.5 -- Ω Dynamic Characteristics td(on) Turn-On Time VDS = 20 V, ID = 30 A, RG = 6 Ω -- 40 -- ㎱ tr Turn-On Rise Time -- 60 -- ㎱ td(off) Turn-Off Delay Time -- 220 -- ㎱ tf Turn-Off Fall Time -- 50 -- ㎱ Qg Total Gate Charge VDS = 32 V, ID = 30 A, VGS = 10 V -- 130 -- nC Qgs Gate-Source Charge -- 20 -- nC Qgd Gate-Drain Charge -- 35 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=23A, VDD=30V, RG=25Ω, Starting TJ =25°C VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 1.0 -- 2.4 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 30 A -- 3.3 4.0 mΩ VGS = 4.5 V, ID = 20 A -- 4.0 4.8 mΩ gFS Forward Transconductance VDS = 15, ID = 30 A -- 90 -- S
◎ SEMIHOW REV.A0,December 2014 HRLP40N04K Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D
◎ SEMIHOW REV.A0,December 2014 HRLP40N04K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
◎ SEMIHOW REV.A0,December 2014 HRLP40N04K Package Dimension 9.19±0.20 φ3.60 ±0.20 9.90±0.20 2.80±0.20 3.02±0.20 2.54typ 6.50±0.20 0.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 4.50±0.20 0.50±0.20 2.40±0.20 2.54typ TO-220 (A)
◎ SEMIHOW REV.A0,December 2014 HRLP40N04K ±0.20 2.74±0.20 0.81±0.20 1.27±0.20 1.27±0.20 4.57±0.20 0.40±0.20 2.67±0.20 9.14±0.20 φ3.84 ±0.20 2.54typ 2.54typ TO-220 (B) Package Dimension