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 Synchronous Rectification in SMPS  Hard Switching and High Speed Circuit  DC/DC in Telecoms and Inductrial S S S G D D D D

◎ SEMIHOW REV.A0,Jan 2016 HRLF120N10H Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 60 A ISM Pulsed Source-Drain Diode Forward Current -- -- 160 VSD Source-Drain Diode Forward Voltage IS = 12 A, VGS = 0 V -- 0.9 1.2 V trr Reverse Recovery Time IS = 12 A, VGS = 0 V diF/dt = 500 A/μs -- 33 -- ㎱ Qrr Reverse Recovery Charge -- 157 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V -- -- 1 ㎂ IGSS Gate-Body Leakage Current VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 2275 -- ㎊ Coss Output Capacitance -- 162 -- ㎊ Crss Reverse Transfer Capacitance -- 7.9 -- ㎊ Rg Gate Resistance VGS = 0 V, VDS = 0 V, f = 1MHz -- 1.5 -- Ω Dynamic Characteristics td(on) Turn-On Time VDS = 50 V, ID = 12 A, RG = 10 Ω -- 8 -- ㎱ tr Turn-On Rise Time -- 3 -- ㎱ td(off) Turn-Off Delay Time -- 26 -- ㎱ tf Turn-Off Fall Time -- 4 -- ㎱ Qg (10V) Total Gate Charge VDS = 50 V, ID = 12 A, VGS = 10 V -- 29 -- nC Qg (4.5V) Total Gate Charge -- 14 -- nC Qgs Gate-Source Charge -- 5 -- nC Qgd Gate-Drain Charge -- 5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 1.0 -- 3.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 20 A -- 9.5 12 mΩ VGS = 4.5 V, ID = 20 A -- 11.5 15 mΩ gFS Forward Transconductance VDS = 5, ID = 20 A -- 30 -- S

◎ SEMIHOW REV.A0,Jan 2016 HRLF120N10H Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D BVDSS t p VDD IAS VDS (t) ID (t) Time

◎ SEMIHOW REV.A0,Jan 2016 HRLF120N10H Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

◎ SEMIHOW REV.A0,Jan 2016 HRLF120N10H Package Dimension 8DFN 5x6