DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
HRLD150N10K_HRLU150N10K BVDSS = 100 V RDS(on) typ =13 Pȍ ID = 70 A
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage 100 V ID Drain Current – Continuous (TC = 25) 70 * A Drain Current – Continuous (TC = 100) 49 * A IDM Drain Current – Pulsed (Note 1) 245 * A VGS Gate-Source Voltage ρ20 V EAS Single Pulsed Avalanche Energy (Note 2) 265 mJ EAR Repetitive Avalanche Energy (Note 1) 11 mJ PD Power Dissipation (TA = 25)* 3 W Power Dissipation (TC = 25) - Derate above 25 110 W
0.73 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +175 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 1.Gate 2. Drain 3. Source Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 1.4 /WRșJA Junction-to-Ambient* -- 50 RșJA Junction-to-Ambient -- 110 Jan 2015 D-PAK I-PAK HRLD150N10K HRLU150N10K * When mounted on the minimum pad size recommended (PCB Mount) * Drain current limited by maximum junction temperature Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 13 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 14 Pȍ (Typ.) @VGS=4.5V 100% Avalanche Tested
HRLD150N10K_HRLU150N10K Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 70 A ISM Pulsed Source-Drain Diode Forward Current -- -- 245 VSD Source-Drain Diode Forward Voltage I S = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 30 A, VGS = 0 V diF/dt = 100 A/ȝV -- 50 -- Ꭸ Qrr Reverse Recovery Charge -- 80 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 Ꮃ VDS = 80 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 4000 -- Ꮔ Coss Output Capacitance -- 290 -- Ꮔ Crss Reverse Transfer Capacitance -- 150 -- Ꮔ Rg Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 1.2 -- Dynamic Characteristics td(on) Turn-On Time VDS = 50 V, ID = 30 A, RG = 6 -- 30 -- Ꭸ tr Turn-On Rise Time -- 30 -- Ꭸ td(off) Turn-Off Delay Time -- 180 -- Ꭸ tf Turn-Off Fall Time -- 25 -- Ꭸ Qg Total Gate Charge VDS = 80 V, ID = 30 A, VGS = 10 V -- 80 -- nC Qgs Gate-Source Charge -- 10 -- nC Qgd Gate-Drain Charge -- 15 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=20A, VDD=25V, RG=25:, Starting TJ =25qC VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 1.0 -- 2.4 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 30 A -- 13 15 m VGS = 4.5 V, ID = 15 A -- 14 20 m gFS Forward Transconductance V DS = 15, ID = 30 A -- 130 -- S
HRLD150N10K_HRLU150N10K Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
HRLD150N10K_HRLU150N10K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
HRLD150N10K_HRLU150N10K Package Dimension {vTY\\YG Oh˅ GnztPG
HRLD150N10K_HRLU150N10K Package Dimension {vTY\\XG Oh˅ GnztPG
HRLD150N10K_HRLU150N10K Package Dimension {vTY\\XG Oh˅ GjskPG