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◎ SEMIHOW REV.A0,December 2014 HRLD125N06K_HRLU125N06K BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A
FEATURES
60V N-Channel Trench MOSFET Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 50 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.5V 100% Avalanche Tested December 2014 1.Gate 2. Drain 3. Source D-PAK I-PAK HRD125N06K HRU125N06K Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V ID Drain Current – Continuous (TC = 25℃) 70 * A Drain Current – Continuous (TC = 100℃) 49 * A IDM Drain Current – Pulsed (Note 1) 245 * A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 145 mJ EAR Repetitive Avalanche Energy (Note 1) 9.4 mJ PD Power Dissipation (TA = 25℃)* 3 W Power Dissipation (TC = 25℃) - Derate above 25℃ 94 W
0.63 W/℃
TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 1.6 ℃/W RθJA Junction-to-Ambient* -- 50 RθJA Junction-to-Ambient -- 110 * When mounted on the minimum pad size recommended (PCB Mount) * Drain current limited by maximum junction temperature
◎ SEMIHOW REV.A0,December 2014 HRLD125N06K_HRLU125N06K Electrical Characteristics TJ=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 70 A ISM Pulsed Source-Drain Diode Forward Current -- -- 245 VSD Source-Drain Diode Forward Voltage IS = 15 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 15 A, VGS = 0 V diF/dt = 100 A/μs -- 40 -- ㎱ Qrr Reverse Recovery Charge -- 40 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ㎂ 60 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V -- -- 1 ㎂ IGSS Gate-Body Leakage Current VGS = ±20 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2700 -- ㎊ Coss Output Capacitance -- 230 -- ㎊ Crss Reverse Transfer Capacitance -- 180 -- ㎊ Rg Gate Resistance VGS = 0 V, VDS = 0 V, f = 1MHz -- 1.2 -- Ω Dynamic Characteristics td(on) Turn-On Time VDS = 30 V, ID = 15 A, RG = 6 Ω -- 20 -- ㎱ tr Turn-On Rise Time -- 50 -- ㎱ td(off) Turn-Off Delay Time -- 120 -- ㎱ tf Turn-Off Fall Time -- 40 -- ㎱ Qg Total Gate Charge VDS = 48 V, ID = 15 A, VGS = 10 V -- 50 -- nC Qgs Gate-Source Charge -- 7 -- nC Qgd Gate-Drain Charge -- 13 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=13A, VDD=25V, RG=25Ω, Starting TJ =25°C VGS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 1.0 -- 2.4 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 15 A -- 10 12.5 mΩ VGS = 4.5 V, ID = 10 A -- 12 15 mΩ gFS Forward Transconductance VDS = 15, ID = 15 A -- 60 -- S
◎ SEMIHOW REV.A0,December 2014 HRLD125N06K_HRLU125N06K Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D
◎ SEMIHOW REV.A0,December 2014 HRLD125N06K_HRLU125N06K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
◎ SEMIHOW REV.A0,December 2014 HRLD125N06K_HRLU125N06K Package Dimension TO-252 (Ass’y GZSM)
◎ SEMIHOW REV.A0,December 2014 HRLD125N06K_HRLU125N06K Package Dimension TO-251 (Ass’y GZSM)
◎ SEMIHOW REV.A0,December 2014 HRLD125N06K_HRLU125N06K Package Dimension TO-251 (Ass’y CLD)