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80V N-Channel Trench MOSFET Jan 2016 Absolute Maximum Ratings TJ=25 unless otherwise specified 8DFN 5x6 BVDSS = 80 V ID = 70 A Unrivalled Gate Charge : 75 nC (Typ.) Lower RDS(ON) : 7.0 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested
FEATURES
Symbol Parameter Value Units VDSS Drain-Source Voltage 80 V VGS Gate-Source Voltage ρ25 V ID Drain Current TC = 25 70 A TC = 100 56 A IDM Pulsed Drain Current (Note 1) 150 A EAS Single Pulsed Avalanche Energy (Note 2) 290 mJ PD Power Dissipation TC= 25 83 W TA = 25 2.0 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 1.5 /W RșJA Junction-to-Ambient (steady state) -- 62 /W
Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 70 A ISM Pulsed Source-Drain Diode Forward Current -- -- 150 VSD Source-Drain Diode Forward Voltage I S = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 30 A, VGS = 0 V diF/dt = 100 A/ȝV -- 45 -- Ꭸ Qrr Reverse Recovery Charge -- 65 -- nC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 80 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V -- -- 1 Ꮃ VDS = 64 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ25 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 3200 -- Ꮔ Coss Output Capacitance -- 440 -- Ꮔ Crss Reverse Transfer Capacitance -- 270 -- Ꮔ Rg Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 1.2 -- Dynamic Characteristics td(on) Turn-On Time VDS = 40 V, ID = 30 A, RG = 6 -- 50 -- Ꭸ tr Turn-On Rise Time -- 65 -- Ꭸ td(off) Turn-Off Delay Time -- 140 -- Ꭸ tf Turn-Off Fall Time -- 50 -- Ꭸ Qg Total Gate Charge VDS = 64 V, ID = 30 A, VGS = 10 V -- 75 -- nC Qgs Gate-Source Charge -- 20 -- nC Qgd Gate-Drain Charge -- 25 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.2 -- 3.8 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 30 A -- 7.0 8.5 m gFS Forward Transconductance V DS = 5 V, ID = 30 A -- 42 -- S Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=19A, VDD=30V, RG=25:, Starting TJ =25qC
Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Figure 4. Body Diode Forward Voltage Figure 5. Capacitance Characteristics Figur e 6. Gate Charge Characteristics
5000 Ciss = Cgs + Cgd (Cds = shorted)
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
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