HM0565

HM0565 HMSEMI | Alldatasheet

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Silicon N-Channel Power MOSFET HM0565 General Description ： V 650 V DSS HM0565, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT23-3L, which accords with the RoHS standard. I 0.5 A D P (T =25℃) 3 W D C R 9 Ω DS(ON)Typ Features ： z Fast Switching z Low ON Resistance(Rdson≤10.5Ω) z Low Gate Charge (Typical Data:6.0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test Applications ： Power switch circuit of adaptor and charger. Absolute （Tc= 25℃ unless otherwise specified ） ： Symbol Parameter Rating Units VDSS 650 V Drain-to-Source V oltage Continuous Drain Current 0.5 A ID Continuous Drain Current T C = 100 °C 0.35 A IDM a1 Pulsed Drain Current 2.0 A VGS Gate-to-Source V oltage ±30 V EAS a2 Single Pulse Avalanche Energy 70 mJ EAR a1 Avalanche Energy ,Repetitive 6 mJ IAR a1 Avalanche Current 1.1 A dv/dt a3 Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 3 W PD Derating Factor above 25°C 0.024 W/℃ TJ，Tstg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃ TL MaximumTemperature for Soldering 300 ℃ Page 1 of 10 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com SOT-23/

Electrical Characteristics（Tc= 25℃ unless otherwise specified） ： OFF Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units VDSS Drain to Source Breakdown V oltage VGS=0V , ID=250µA 650 -- -- V ΔBVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.71 -- V/℃ VDS = 600V , VGS= 0V , Ta = 25 ℃ -- -- 25 IDSS Drain to Source Leakage Current VDS =480V , VGS= 0V , µA IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA ON Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units RDS(ON) Drain-to-Source On-Resistance VGS=10V ,ID=0.5A -- 9 30 Ω VGS(TH) Gate Threshold V oltage VDS = VGS, ID = 250µA 2.0 4.0 V Pulse width tp ≤380µs, δ≤2% Dynamic Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units gfs Forward Transconductance VDS=15V , ID =0.5A -- 0.70 -- S Ciss Input Capacitance -- 150 -- Coss Output Capacitance -- 25 -- Crss Reverse Transfer Capacitance VGS = 0V V DS = 25V f = 1.0MHz -- 4 -- pF Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units td(ON) Turn-on Delay Time -- 23 -- tr Rise Time -- 27 -- td(OFF) Turn-Off Delay Time -- 12 -- tf Fall Time ID =0.5 A V DD = 300V VGS = 10V R G = 25Ω -- 27 -- ns Qg Total Gate Charge -- 6.0 Qgs Gate to Source Charge -- 1.1 Qgd Gate to Drain (“Miller”)Charge ID =0.5A V DD =480V VGS = 10V -- 3.5 nC Page 2 of 10 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com

Source-Drain Diode Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current (Body Diode) -- -- 0 .5 A ISM Maximum Pulsed Current (Body Diode) -- -- 2.0 A VSD Diode Forward V oltage IS=0.5A,VGS=0V -- -- 1.5 V trr Reverse Recovery Time -- 140 ns Qrr Reverse Recovery Charge -- 224 nC IRRM Reverse Recovery Current IS=0.5A,Tj = 25°C dIF/dt=100A/us, VGS=0V -- 3.2 A Pulse width tp ≤380µs, δ≤2% Symbol Parameter Typ. Units RθJC Junction-to-Case 41.7 ℃/W RθJA Junction-to-Ambient 200 ℃/W a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=10.0mH, I D=3.7A, Start T J=25℃ a3：ISD =1.2A,di/dt ≤100A/us,V DD≤BVDS, Start T J=25℃ HM0565 Page 3 of 10 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com

Tc , Case Temperature , C Pd , Power Dissipation ,Watts 0 25 10075 125 150 3.5 2.5 1.5 0.5 Characteristics Curve： 0.01 0.1 1 10 100 1000 V ds,D rain-to-source V oltage,V olts

0.001 Id,Drian current,Amps

10μs 10ms 100ms DC OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration,Seconds Thermal Impedance,Normanlized 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 5 10 15 20 25 30 Vds ,Drain Source Voltage,Volts Id,Drain Source,Volts Figure 2 Maximun Power Dissipation vs Case Temperature Figure 5 Maximum Effective Thermal Impendance , Junction to Case Figure 4 T ypical Output CharacteristicsFigure 3 Maximum Continuous Drain Current vs Case Temperature Figure 1 Maximun Forward Bias Safe Operating Area TJ=150℃ VGS=10V VGS=5V VGS=6V VGS=8V VGS=9V PDM NOTES： DUTY FACTOR ：D=t1/ t2 PEAK Tj=PDM*ZthJC*RthJC+TC 50% 20% 10% Single pulse 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150 Tc , Case Tem p erature ,C 0.4 0.2 0.6Id , Drain Current ,Amps TC=25℃ Single Pulse HM0565 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com

Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com

Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com

SOT-23-3L PACKAGE INFORMATION NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

The name and content of poisonous and harmful material in products Hazardous Substance Part’s Name P b H g C d C r ( V I ) P B B P B D E Note ○：means the hazardous material is under the criterion of SJ/T11363-2006. ×：means the ha zardous material exceeds the criterion of SJ/T11363-2006. Warnings 1. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electri city , it is necessory to protect the device from being damaged by the static electricity when using it. 4. This publication is made by H&M Semiconductor and subject to regular change without notice. HM0565 Page 10 of 10 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com