DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
Low forward drop voltage Dual common cathode rectifier construction Ultrafast recovery time and high speed switching General Description The HDS20U20AW is ideally as boost diode in discontinuous or critical mode power factor corrections. The planar structure and the platinum doper life time control guarantee the best overall performance, ruggedness reliability characteristics. The device is also intended for use as a freewheeling diode in power supplies and other power switching applications.Absolute Maximum Ratings TA=25πC unless otherwise noted Thermal Resistance Characteristics Symbol Parameter Test Conditions Min Typ Max Unit VF Forward Voltage IF = 10A, TJ = 25 -- 0.93 0.98 V IR Reverse Current uA trr Reverse Recovery Time I F $GLGW $ȝV -- 19 25 ns Cj Junction Capacitance V R = 10V, f=1MHz -- 60 -- pF Electrical Characteristics (Per Diode) Symbol Parameter Typ. Max. Unit RșJC Junction-to-Case (Per Diode) -- 4.0 /W Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 200 V VR DC Blocking Voltage IF(AV) Average Rectifier Forward Current (Per Diode) (Total Diode) 20 A IFSM Non-Rectifier Peak Surge Current @8.3ms (Per Diode) 130 A TJ, TSTG Operating and Storage Temperature Range -45 to +150 1 2 3 Pin 1, 3 : Anode Pin 2 : Cathode
0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 ij ±0.20 {vTYYWmG