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Technical content
◎ SEMIHOW REV.A0,Nov 2010 HDS20A03x Thru HDS20A06x Maximum Ratings Symbol Parameter Value Units03 035 04 045 05 06 VRRM Peak Repetitive Reverse Voltage 30 35 40 45 50 60 VVRWM Working Peak Reverse Voltage VR DC Blocking Voltage VR(RMS) R.M.S Reverse Voltage 21 25 28 32 35 42 V IF(AV) Average Rectifier Forward Current - Total Device (Rated VR), TC=100℃ 10 A 20 A IFM Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) 20 A IFSM Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half ware, single phase, 60Hz) 200 A TJ, TSTG Operating and Storage Temperature Range -65 to +125 ℃ Symbol Parameter Value Units03 035 04 045 05 06 VF Maximum Instantaneous Forward Voltage - ( IF =10 Amp TC = 25℃) - ( IF =10 Amp TC = 100℃) 0.55 0.48 0.65 0.57 V I R Maximum Instantaneous Reverse Current - ( Rated DC Voltage, TC = 25℃) - ( Rated DC Voltage, TC = 125℃) 1.0 mA Electrial Characteristics
- Low Forward Voltage.
- Low Switching noise.
- High Current Capacity
- Guarantee Reverse Avalanche.
- Guard-Ring for Stress Protection.
- Low Power Loss & High efficiency.
- 125℃ Operating Junction Temperature
- Low Stored Charge Majority Carrier Conduction.
- Plastic Material used Carries Underwriters Laboratory
FEATURES
Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. 30-60 VOLTS
20 AMPERES
◎ SEMIHOW REV.A0,Nov 2010 HDS20A03x Thru HDS20A06x Package Dimension DIM MILLIMETERS MIN MAX A 15.05 15.15 B 13.35 13.45 C 10.00 10.10 D 6.55 6.65 E 2.65 2.75 F 1.55 1.65 G 1.15 1.25 H 0.55 0.65 I 2.50 2.60 J 3.00 3.20 K 1.10 1.20 L 0.55 0.65 M 4.40 4.60 N 1.15 1.25 P 2.65 2.75 O 3.35 3.45 Q 3.15 3.25 ITO-220AB