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Technical content
◎ SEMIHOW REV.A0,Nov 2010 HDS10U30x Thru HDS10U60x Maximum Ratings Symbol Parameter Value Units30 40 50 60 VRRM Peak Repetitive Reverse Voltage 300 400 500 600 VVRWM Working Peak Reverse Voltage VR DC Blocking Voltage VR(RMS) R.M.S Reverse Voltage 210 280 350 420 V IF(AV) Average Rectifier Forward Current - Total Device (Rated VR), TC=100℃ 5.0 A 10 A IFM Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz, TC=125℃) 10 A IFSM Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half ware, single phase, 60Hz) 100 A TJ, TSTG Operating and Storage Temperature Range -65 to +150 ℃ 300-600 VOLTS
10 AMPERES
Symbol Parameter Value Units30 40 50 60 VF Maximum Instantaneous Forward Voltage - ( IF =5.0 Amp TC = 25℃) - ( IF =5.0 Amp TC = 100℃) 1.30 1.16 1.50 1.38 V I R Maximum Instantaneous Reverse Current - ( Rated DC Voltage, TC = 25℃) - ( Rated DC Voltage, TC = 125℃) 5.0 200 uA Trr Reverse Recovery Time ( IF = 0.5 A, IR =1.0 , Irr =0.25 A ) 50 ns CP Typical Junction Capacitance (Reverse Voltage of 4 volts & f=1 MHz) 70 60 pF Electrial Characteristics
- High Surge Capacity
- Low Power Loss, High efficiency
- Glass Passivated chip junctions
- 150℃ Operating Junction Temperature
- Low Stored Charge Majority Carrier Conduction
- Low Forward Voltage , High Current Capability
- High-Switching Speed 50 & 75 Nanosecond Recovery Time
- Plastic Material used Carries Underwriters Laboratory
FEATURES
Switchmode Full Plastic Dual Ultrafast Power Rectifiers …Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: 21 3 ITO-220AB JAN 2010
Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram