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High Breakdown Voltage High Speed Switching General Description With excellent performance in reverse recovery time, switching speed and rated current, HDA40U20GW can be utilized with high voltage power switches for voltage limitation and high-frequency current rectification. May 2015 Absolute Maximum Ratings TC=25°C unless otherwise noted Thermal Resistance Characteristics Symbol Parameter Test Conditions Min Typ Max Unit VBR Breakdown Voltage IR = 50uA 200 -- -- V VF Forward Voltage IF = 20A, TC = 25℃ -- 0.95 1.05 V IR Reverse Current VR = 200V, TC = 25℃ -- -- 10 uA trr Reverse Recovery Time IF = 1A, di/dt = 200A/μs -- 20 -- ns IF = 20A, di/dt = 200A/μs -- 26 -- ns Electrical Characteristics (Per Diode) Symbol Parameter Typ. Max. Unit RθJC Junction-to-Case (Per Diode) -- 1.0 ℃/W Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 200 V VR DC Blocking Voltage IF(AV) Average Rectifier Forward Current (Per Diode) (Total Diode) 40 A IFSM Non-Rectifier Peak Surge Current @8.3ms (Per Diode) 200 A TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃
◎ SEMIHOW REV.A2,.May 2015 HDA40U20GW Package Dimension TO-247