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BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID =5 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\\S #9GS=10V 100% Avalanche Tested
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HCS7N70S 700V N-Channel Super Junction MOSFET November 2014 1.Gate 2. Drain 3. Source TO-220F Symbol Parameter Value Units VDSS Drain-Source Voltage 700 V ID Drain Current – Continuous (TC = 25) 5.0 * A Drain Current – Continuous (TC = 100) 3.2 * A IDM Drain Current – Pulsed (Note 1) 13.0 * A VGS Gate-Source Voltage Static ρ20 V AC (f>1 Hz) ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ IAR Avalanche Current (Note 1) 1.2 A EAR Repetitive Avalanche Energy (Note 1) 0.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns PD Power Dissipation (TC = 25) - Derate above 25 28 W 0.22 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Thermal Resistance Characteristics * Drain current limited by maximum junction temperature Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 4.4 /W RșJA Junction-to-Ambient -- 60.5
Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 5 A ISM Pulsed Source-Drain Diode Forward Current -- -- 13 VSD Source-Drain Diode Forward Voltage I S = 2.3 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 2.3 A, VGS = 0 V diF/dt = 100 A/ȝV -- 150 -- Ꭸ Qrr Reverse Recovery Charge -- 1.1 -- uC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 700 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 700 V, VGS = 0 V -- -- 10 Ꮃ VDS = 560 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 100 V, VGS = 0 V, f = 1.0 MHz -- 340 440 Ꮔ Coss Output Capacitance -- 20 26 Ꮔ Crss Reverse Transfer Capacitance -- 5.0 6.5 Ꮔ Rg Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 5.2 -- Dynamic Characteristics td(on) Turn-On Time VDS = 350 V, ID = 2.3 A, RG = 10 -- 20 50 Ꭸ tr Turn-On Rise Time -- 25 60 Ꭸ td(off) Turn-Off Delay Time -- 60 130 Ꭸ tf Turn-Off Fall Time -- 30 70 Ꭸ Qg Total Gate Charge VDS = 560 V, ID = 2.3 A, VGS = 10 V -- 9.0 12 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 3.0 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.3 A -- 0.95 1.1 Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=1.5A, VDD=50V, RG=25:, Starting TJ =25qC
Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Figure 4. Body Diode Forward Voltage Figure 5. Capacitance Characteristics Figur e 6. Gate Charge Characteristics
2400 Ciss = Cgs + Cgd (Cds = shorted)
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 ij ±0.20 {vTYYWmG