DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
BVDSS = 700 V RDS(on) typ ȍ ID = 6.2 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\\S #9GS=10V 100% Avalanche Tested
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HCS70R660S 700V N-Channel Super Junction MOSFET Jan 2015 Symbol Parameter Value Units VDSS Drain-Source Voltage 700 V ID Drain Current – Continuous (TC = 25) 6.2 * A Drain Current – Continuous (TC = 100) 3.5 * A IDM Drain Current – Pulsed (Note 1) 18 * A VGS Gate-Source Voltage ρ20 V EAS Single Pulsed Avalanche Energy (Note 2) 100 mJ IAR Avalanche Current (Note 1) 2 A EAR Repetitive Avalanche Energy (Note 1) 1 mJ dv/dt Peak Diode Recovery dv/dt 15 V/ns PD Power Dissipation (TC = 25) - Derate above 25 29 W 0.23 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 1.Gate 2. Drain 3. Source TO-220F Thermal Resistance Characteristics * Drain current limited by maximum junction temperature Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 4.3 /W RșJA Junction-to-Ambient -- 60.5
Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 6.2 A ISM Pulsed Source-Drain Diode Forward Current -- -- 18 VSD Source-Drain Diode Forward Voltage I S = 6.2 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time IS = 3 A, VGS = 0 V diF/dt = 100 A/ȝV -- 250 -- Ꭸ Qrr Reverse Recovery Charge -- 2 -- uC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 700 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 700 V, VGS = 0 V -- -- 10 Ꮃ VDS = 560 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 550 -- Ꮔ Coss Output Capacitance -- 250 -- Ꮔ Crss Reverse Transfer Capacitance -- 8 -- Ꮔ Rg Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 4 -- Dynamic Characteristics td(on) Turn-On Time VDS = 350 V, ID = 6.2 A, RG = 25 -- 20 -- Ꭸ tr Turn-On Rise Time -- 20 -- Ꭸ td(off) Turn-Off Delay Time -- 50 -- Ꭸ tf Turn-Off Fall Time -- 20 -- Ꭸ Qg Total Gate Charge VDS = 560 V, ID = 6.2 A, VGS = 10 V -- 14 -- nC Qgs Gate-Source Charge -- 3.5 -- nC Qgd Gate-Drain Charge -- 4.5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.8 -- 4.2 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.0 A -- 0.6 0.66 Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=2A, VDD=50V, RG=25:, Starting TJ =25qC
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 ij ±0.20 {vTYYWmG