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Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 6.2 /W RșJA Junction-to-Ambient -- 62.5 Symbol Parameter Value Units VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage ρ30 V ID Drain Current – Continuous (TC = 25) 4.0 * A Drain Current – Continuous (TC = 100) 2.8 * A IDM Drain Current – Pulsed (Note 1) 12.0 * A EAS Single Pulsed Avalanche Energy (Note 2) 130 mJ PD Power Dissipation (TC = 25) 20 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Absolute Maximum Ratings TC=25 unless otherwise specified Apr 2016 D G S * Drain current limited by maximum junction temperature
HCS70R1K4P Super Junction MOSFET Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 4 A ISM Pulsed Source-Drain Diode Forward Current -- -- 12 VSD Source-Drain Diode Forward Voltage I S = 4 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time IS = 4 A, VGS = 0 V diF/dt = 100 A/ȝV -- 150 -- Ꭸ Qrr Reverse Recovery Charge -- 0.85 -- ȝ& On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 700 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 700 V, VGS = 0 V -- -- 10 Ꮃ VDS = 560 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 280 -- Ꮔ Coss Output Capacitance -- 30 -- Ꮔ Crss Reverse Transfer Capacitance -- 5.5 -- Ꮔ Dynamic Characteristics td(on) Turn-On Time VDS = 350 V, ID = 4 A, RG = 25 -- 15 40 Ꭸ tr Turn-On Rise Time -- 20 50 Ꭸ td(off) Turn-Off Delay Time -- 30 70 Ꭸ tf Turn-Off Fall Time -- 20 50 Ꭸ Qg Total Gate Charge VDS = 560 V, ID = 4 A VGS = 10 V -- 7.5 10 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 2.5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 2 A -- 1.15 1.4 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=16.2mH, IAS=4A, VDD=50V, RG=25:, Starting TJ =25qC
HCS70R1K4P Super Junction MOSFET Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
HCS70R1K4P Super Junction MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
HCS70R1K4P Super Junction MOSFET Package Dimension 0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 ij ±0.20 {vTYYWmG TO-220FM TO-220F