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Lighting Hard Switching PWM Server Power Supply Charger Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 3.67 /W RșJA Junction-to-Ambient -- 62.5 Absolute Maximum Ratings TC=25 unless otherwise specified April 2016 D G S * Drain current limited by maximum junction temperature Symbol Parameter Value Units VDSS Drain-Source Voltage 550 V VGS Gate-Source Voltage ρ30 V ID Drain Current – Continuous (TC = 25) 23.0 * A Drain Current – Continuous (TC = 100) 14.5 * A IDM Drain Current – Pulsed (Note 1) 69.0 * A EAS Single Pulsed Avalanche Energy (Note 2) 570 mJ dv/dt MOSFET dv/dt ruggedness, VDS=0…400V 50 V/ns dv/dt Reverse diode dv/dt, VDS=0…400V, I DSID 15 V/ns PD Power Dissipation 34 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300
HCS55R140E Super Junction MOSFET Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 23 A ISM Pulsed Source-Drain Diode Forward Current -- -- 69 VSD Source-Drain Diode Forward Voltage I S = 23 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time IS = 23 A, VGS = 0 V diF/dt = 100 A/ȝV -- 372 -- Ꭸ Qrr Reverse Recovery Charge -- 5.1 -- ȝ& BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 550 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 550 V, VGS = 0 V -- -- 1 Ꮃ VDS = 440 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 1410 -- Ꮔ Coss Output Capacitance -- 150 -- Ꮔ Crss Reverse Transfer Capacitance -- 4.1 -- Ꮔ Dynamic Characteristics td(on) Turn-On Time VDS = 420 V, ID = 23 A, RG = 25 -- 48 -- Ꭸ tr Turn-On Rise Time -- 22 -- Ꭸ td(off) Turn-Off Delay Time -- 78 -- Ꭸ tf Turn-Off Fall Time -- 21 -- Ꭸ Qg Total Gate Charge VDS = 420 V, ID = 23 A VGS = 10 V -- 22 29 nC Qgs Gate-Source Charge -- 9 -- nC Qgd Gate-Drain Charge -- 4.5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics On Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 11.5 A -- 0.11 0.14 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=6.9A, VDD=50V, RG=25:, Starting TJ =25qC 3. Pulse Test : Pulse Width ȝV'XW\\&\\FOH
HCS55R140E Super Junction MOSFET Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
HCS55R140E Super Junction MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
HCS55R140E Super Junction MOSFET Package Dimension 0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 ij ±0.20 {vTYYWmG TO-220FM TO-220F