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BVDSS = 500 V RDS(on) typ = 0.13 ȍ ID =2 2 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.15 ȍ(Typ.) @VGS=10V 100% Avalanche Tested RoHS Compliant
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HCS50R150V 500V N-Channel Super Junction MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage 500 V ID Drain Current – Continuous (TC = 25) 22* A Drain Current – Continuous (TC = 100) 15.4* A IDM Drain Current – Pulsed (Note 1) 66* A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 500 mJ IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 1m J dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25) - Derate above 25 34.5 W
0.28 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 3.6 /W RșJA Junction-to-Ambient -- 80 July 2014 1.Gate 2. Drain 3. Source TO-220F * Drain current limited by maximum junction temperature
Electrical Characteristics TJ=25 qC unless otherwise specified IS Continuous Source-Drain Diode Forward Current -- -- 22 AISM Pulsed Source-Drain Diode Forward Current -- -- 66 VSD Source-Drain Diode Forward Voltage I S = 22 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 22 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 300 -- Ꭸ Qrr Reverse Recovery Charge -- 5 -- ȝ& Symbol Parameter Test Conditions Min Typ Max Units VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 3.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 11 A -- 0.13 0.15 gFS Forward Transconductance VDS = 10 V, ID = 11 A͑ -- 18.8 -- ΄͑ On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 500 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- -- 1 Ꮃ VDS = 400 V, TC = 125 -- -- 10 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 2140 -- Ꮔ Coss Output Capacitance -- 300 -- Ꮔ Crss Reverse Transfer Capacitance -- 18 -- Ꮔ Dynamic Characteristics td(on) Turn-On Time VDS = 250 V, ID = 22 A, RG = 25 (Note 4,5) -- 40 -- Ꭸ tr Turn-On Rise Time -- 20 -- Ꭸ td(off) Turn-Off Delay Time -- 200 -- Ꭸ tf Turn-Off Fall Time -- 20 -- Ꭸ Qg Total Gate Charge VDS = 400 V, ID = 22 A, VGS = 10 V (Note 4,5) -- 54 -- nC Qgs Gate-Source Charge -- 10 -- nC Qgd Gate-Drain Charge -- 20 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Package Marking and Ordering Information Device Marking Week Marking Package Packing Quantity RoHS Status HCS50R150V YWWX TO-220F Tube 50 Pb Free HCS50R150V YWWXg TO-220F Tube 50 Halogen Free Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=10mH, IAS=10A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$,d i / d t$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\\&\\FOH 5. Essentially Independent of Operating Temperature
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 ij ±0.20 {vTYYWmG