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BVDSS = 650 V RDS(on) typ = 0.34 ȍ ID =1 2 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 32 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested RoHS Compliant
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HCS12NK65V 650V N-Channel Super Junction MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage 650 V ID Drain Current – Continuous (TC = 25) 12* A Drain Current – Continuous (TC = 100) 7.4* A IDM Drain Current – Pulsed (Note 1) 48* A VGS Gate-Source Voltage ρ20 V EAS Single Pulsed Avalanche Energy (Note 2) 200 mJ IAR Avalanche Current (Note 1) 4A EAR Repetitive Avalanche Energy (Note 1) 1m J dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25) - Derate above 25 33 W
0.26 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 3.8 /W RșJA Junction-to-Ambient -- 80 Jan 2014 1.Gate 2. Drain 3. Source TO-220F * Drain current limited by maximum junction temperature
Electrical Characteristics TJ=25 qC unless otherwise specified IS Continuous Source-Drain Diode Forward Current -- -- 12 AISM Pulsed Source-Drain Diode Forward Current -- -- 48 VSD Source-Drain Diode Forward Voltage I S = 12 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 12 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4) -- 360 -- Ꭸ Qrr Reverse Recovery Charge -- 3.5 -- ȝ& Symbol Parameter Test Conditions Min Typ Max Units VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 3.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A -- 0.34 0.38 gFS Forward Transconductance VDS = 10 V, ID = 6 A͑ -- 10 -- ΄͑ On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 650 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- -- 1 Ꮃ VDS = 520 V, TC = 125 -- -- 10 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 1340 1740 Ꮔ Coss Output Capacitance -- 215 280 Ꮔ Crss Reverse Transfer Capacitance -- 6 8 Ꮔ Dynamic Characteristics td(on) Turn-On Time VDS = 325 V, ID = 12 A, RG = 25 (Note 4,5) -- 25 60 Ꭸ tr Turn-On Rise Time -- 60 130 Ꭸ td(off) Turn-Off Delay Time -- 180 370 Ꭸ tf Turn-Off Fall Time -- 70 150 Ꭸ Qg Total Gate Charge VDS = 520 V, ID = 12 A, VGS = 10 V (Note 4,5) -- 32 42 nC Qgs Gate-Source Charge -- 10 -- nC Qgd Gate-Drain Charge -- 10 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics Package Marking and Ordering Information Device Marking Week Marking Package Packing Quantity RoHS Status HCS12NK65V YWWX TO-220F Tube 50 Pb Free HCS12NK65V YWWXg TO-220F Tube 50 Halogen Free Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=2.6mH, IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$di/dt$ȝV, VDD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\\&\\FOH 5. Essentially Independent of Operating Temperature
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
0.70±0.20 ±0.20 3.30±0.20 15.87±0.20 12.42±0.20 2.54typ 6.68±0.20 0.80±0.20 1.47max 2.54±0.20 ±0.20 0.50±0.20 2.76±0.20 2.54typ 9.75±0.20 ij ±0.20 {vTYYWmG