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BVDSS = 700 V RDS(on) typ = 0.32 ȍ ID =1 1 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\\S #9GS=10V 100% Avalanche Tested
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HCP70R360S 700V N-Channel Super Junction MOSFET Thermal Resistance Characteristics March 2015 1.Gate 2. Drain 3. Source Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 1.0 /W RșJA Junction-to-Ambient -- 60.5 Symbol Parameter Value Units VDSS Drain-Source Voltage 750 V ID Drain Current – Continuous (TC = 25) 11 A Drain Current – Continuous (TC = 100) 7 A IDM Drain Current – Pulsed (Note 1) 33 A VGS Gate-Source Voltage Static ρ20 V AC (f>1 Hz) ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ IAR Avalanche Current (Note 1) 3.0 A EAR Repetitive Avalanche Energy (Note 1) 0.6 mJ dv/dt Peak Diode Recovery dv/dt 15 V/ns PD Power Dissipation (TC = 25) - Derate above 25 125 W 1 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 TO-220
Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 11 A ISM Pulsed Source-Drain Diode Forward Current -- -- 33 VSD Source-Drain Diode Forward Voltage I S = 11 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 5.5 A, VGS = 0 V diF/dt = 100 A/ȝV -- 350 -- Ꭸ Qrr Reverse Recovery Charge -- 5 -- ȝ& On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 700 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 700 V, VGS = 0 V -- -- 10 Ꮃ VDS = 560 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 920 -- Ꮔ Coss Output Capacitance -- 400 -- Ꮔ Crss Reverse Transfer Capacitance -- 8 -- Ꮔ Rg Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 0.5 -- Dynamic Characteristics td(on) Turn-On Time VDS = 350 V, ID = 11 A, RG = 25 -- 30 -- Ꭸ tr Turn-On Rise Time -- 30 -- Ꭸ td(off) Turn-Off Delay Time -- 85 -- Ꭸ tf Turn-Off Fall Time -- 25 -- Ꭸ Qg Total Gate Charge VDS = 560 V, ID = 11 A VGS = 10 V -- 23 -- nC Qgs Gate-Source Charge -- 6 -- nC Qgd Gate-Drain Charge -- 7 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.8 -- 4.2 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A -- 0.32 0.36 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=3A, VDD=50V, RG=25:, Starting TJ =25qC
Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Figure 4. Body Diode Forward Voltage Figure 5. Capacitance Characteristics Figur e 6. Gate Charge Characteristics
6000 Ciss = Cgs + Cgd (Cds = shorted)
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
9.19±0.20 ij ±0.20 9.90±0.20 2.80±0.20 3.02±0.20 2.54typ 6.50±0.20 0.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 4.50±0.20 0.50±0.20 2.40±0.20 2.54typ {vTYYWGOhPG
±0.20 2.74±0.20 0.81±0.20 1.27±0.20 1.27±0.20 4.57±0.20 0.40±0.20 2.67±0.20 9.14±0.20 ij ±0.20 2.54typ 2.54typ {vTYYWGOiPG Package Dimension