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BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID =7 A
FEATURES
Absolute Maximum Ratings TC=25 unless otherwise specified HCP60R750V 600V N-Channel Super Junction MOSFET Symbol Parameter Value Units VDSS Drain-Source Voltage 600 V ID Drain Current – Continuous (TC = 25) 7A Drain Current – Continuous (TC = 100) 4.9 A IDM Drain Current – Pulsed (Note 1) 21 A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ IAR Avalanche Current (Note 1) 4A EAR Repetitive Avalanche Energy (Note 1) 0.5 mJ PD Power Dissipation (TC = 25) - Derate above 25 83 W
0.66 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 1.5 /W RșJA Junction-to-Ambient -- 60.5 November 2014 1.Gate 2. Drain 3. Source TO-220 Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\\S #9GS=10V 100% Avalanche Tested
Electrical Characteristics TC=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 7 A ISM Pulsed Source-Drain Diode Forward Current -- -- 21 VSD Source-Drain Diode Forward Voltage I S = 7 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 7 A, VGS = 0 V diF/dt = 100 A/ȝV -- 300 -- Ꭸ Qrr Reverse Recovery Charge -- 2.4 -- ȝ& On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 600 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 Ꮃ VDS = 480 V, TC = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ20 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 710 920 Ꮔ Coss Output Capacitance -- 200 260 Ꮔ Crss Reverse Transfer Capacitance -- 3.5 4.6 Ꮔ Rg Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 0.5 -- Dynamic Characteristics td(on) Turn-On Time VDS = 300 V, ID = 7 A, RG = 25 -- 20 50 Ꭸ tr Turn-On Rise Time -- 25 60 Ꭸ td(off) Turn-Off Delay Time -- 60 130 Ꭸ tf Turn-Off Fall Time -- 25 60 Ꭸ Qg Total Gate Charge VDS = 480 V, ID = 7 A VGS = 10 V -- 14 18.5 nC Qgs Gate-Source Charge -- 4 -- nC Qgd Gate-Drain Charge -- 5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 3.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.4 A -- 0.67 0.75 gFS Forward Transconductance V DS = 10, ID = 4.4 A -- 5 -- S Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=4A, VDD=50V, RG=25:, Starting TJ =25qC
Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
9.19±0.20 ij ±0.20 9.90±0.20 2.80±0.20 3.02±0.20 2.54typ 6.50±0.20 0.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 4.50±0.20 0.50±0.20 2.40±0.20 2.54typ {vTYYWGOhPG
±0.20 2.74±0.20 0.81±0.20 1.27±0.20 1.27±0.20 4.57±0.20 0.40±0.20 2.67±0.20 9.14±0.20 ij ±0.20 2.54typ 2.54typ {vTYYWGOiPG Package Dimension