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Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TV power & LED Lighting Power * When mounted on the minimum pad size recommended (PCB Mount) Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 1.5 /WRșJA Junction-to-Ambient * -- 50 RșJA Junction-to-Ambient -- 110 Symbol Parameter Value Units VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ρ30 V ID Drain Current – Continuous (TC = 25) 11 A Drain Current – Continuous (TC = 100) 7 A IDM Drain Current – Pulsed (Note 1) 33 A EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ PD Power Dissipation (TA = 25) * 2.5 W Power Dissipation (TC = 25) 83 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Absolute Maximum Ratings TC=25 unless otherwise specified Feb 2016
HCD60R350T_HCU60R350T Super Junction MOSFET Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 11 A ISM Pulsed Source-Drain Diode Forward Current -- -- 33 VSD Source-Drain Diode Forward Voltage I S = 11 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time IS = 11 A, VGS = 0 V diF/dt = 100 A/ȝV -- 280 -- Ꭸ Qrr Reverse Recovery Charge -- 2.8 -- ȝ& BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 600 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 10 Ꮃ VDS = 480 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 900 1170 Ꮔ Coss Output Capacitance -- 60 78 Ꮔ Crss Reverse Transfer Capacitance -- 7 9.5 Ꮔ Dynamic Characteristics td(on) Turn-On Time VDS = 300 V, ID = 11 A, RG = 25 -- 30 70 Ꭸ tr Turn-On Rise Time -- 17 44 Ꭸ td(off) Turn-Off Delay Time -- 70 150 Ꭸ tf Turn-Off Fall Time -- 17 44 Ꭸ Qg Total Gate Charge VDS = 480 V, ID = 11 A VGS = 10 V -- 17.5 23 nC Qgs Gate-Source Charge -- 5.0 -- nC Qgd Gate-Drain Charge -- 5.5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics On Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 3.8 A -- 0.3 0.35 Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=4.0A, VDD=50V, RG=25:, Starting TJ =25qC 3. Pulse Test : Pulse Width ȝV'XW\\&\\FOH
HCD60R350T_HCU60R350T Super Junction MOSFET Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
HCD60R350T_HCU60R350T Super Junction MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
HCD60R350T_HCU60R350T Super Junction MOSFET Package Dimension kTwhrG O{vTY\\YsPG
HCD60R350T_HCU60R350T Super Junction MOSFET Package Dimension pTwhrG O{vTY\\XsPG