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Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units RșJC Junction-to-Case -- 0.31 /W RșJA Junction-to-Ambient -- 40 Symbol Parameter Value Units VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ρ30 V ID Drain Current – Continuous (TC = 25) 40 A Drain Current – Continuous (TC = 100) 25 A IDM Drain Current – Pulsed (Note 1) 120 A EAS Single Pulsed Avalanche Energy (Note 2) 1000 mJ IAR Avalanche Current (Note 1) 12 A EAR Repetitive Avalanche Energy (Note 1) 1.5 mJ dv/dt MOSFET dv/dt ruggedness, VDS=0…480V 50 V/ns dv/dt Reverse diode dv/dt, VDS=0…480V, I DSID 15 V/ns PD Power Dissipation (TC = 25) 400 W TJ, TSTG Operating and Storage Temperature Range -55 to +150 TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 Absolute Maximum Ratings TC=25 unless otherwise specified June 2016 DG S
HCA60R095T Super Junction MOSFET Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 40 A ISM Pulsed Source-Drain Diode Forward Current -- -- 120 VSD Source-Drain Diode Forward Voltage I S = 40 A, VGS = 0 V -- -- 1.2 V trr Reverse Recovery Time IS = 40 A, VDD = 480 V diF/dt = 100 A/ȝV -- 528 -- Ꭸ Qrr Reverse Recovery Charge -- 7.2 -- ȝ& BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 Ꮃ 600 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 Ꮃ VDS = 480 V, TJ = 125 -- -- 100 Ꮃ IGSS Gate-Body Leakage Current VGS = ρ30 V, VDS = 0 V -- -- ρ100 Ꮂ Off Characteristics Ciss Input Capacitance VDS = 50 V, VGS = 0 V, f = 1.0 MHz -- 5740 -- Ꮔ Coss Output Capacitance -- 372 -- Ꮔ Crss Reverse Transfer Capacitance -- 6.8 -- Ꮔ Dynamic Characteristics td(on) Turn-On Time VDS = 300 V, ID = 40 A, RG = 25 -- 70 -- Ꭸ tr Turn-On Rise Time -- 140 -- Ꭸ td(off) Turn-Off Delay Time -- 240 -- Ꭸ tf Turn-Off Fall Time -- 31 -- Ꭸ Qg Total Gate Charge VDS = 480 V, ID = 40 A VGS = 10 V -- 109 -- nC Qgs Gate-Source Charge -- 28 -- nC Qgd Gate-Drain Charge -- 40 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics On Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.0 -- 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 20 A -- 80 95 m gFS Forward Transconductance V DS = 10 V, ID = 20 A -- 28 -- S Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC 3. Pulse Test : Pulse Width ȝV'XW\\&\\FOH
HCA60R095T Super Junction MOSFET Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS =L L IAS 2----2 BVDSS -- VDD BVDSS Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS BVDSS t p VDD IAS VDS (t) ID (t) Time VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 200nF12V Same Type as DUT 10V DUT RG L I D
HCA60R095T Super Junction MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG
- IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width
HCA60R095T Super Junction MOSFET Package Dimension {vTY[^G Symbol Size Symbol Size Min Max Min Max W 15.4 15.8 W4 2.44 2.64 W1 5.56 (TYP) L 20.4 20.8 W2 1.17 1.35 L1 5.36 5.56 W3 1.55 1.75 L2 19.8 20.2 L3 3.69 3.93 T3 0.51 0.69 T 4.6 4.8 G(ĭ 3.51 3.65 T1 1.4 1.6 G1( ĭ 6.61 6.85 T2 2.3 2.5 G2( ĭ 4.96 5.2 ( Unit : mm )