H368 HUASHAN | Alldatasheet
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Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS General Purpose Amplifier Application. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 32 V IC=100μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage 20 V IC=2mA, I B=0 BVEBO Emitter-Base Breakdown V oltage 5 V IE=100μA，IC=0 HFE（1） DC Current Gain 85 375 VCE=1V , IC=500mA HFE（2） 50 VCE=10V , IC=5mA HFE（3） 60 VCE=1V , IC=1A VCE(sat) Collector- Emitter Saturation V oltage 0.5 V IC=1A, IB=100mA VBE(on1) Base-Emitter On V oltage 1 V VCE=1V , IC=1A VBE(on2) Base-Emitter On V oltage 0.7 V VCE=10V , IC=5mA ICBO（1） Collector Cut-off Current 0.1 μA VCB=25V , IE=0 ICBO（2） Collector Cut-off Current 10 μA VCB=25V , IE=0,Ta=150℃ IEBO Emitter Cut-off Current 0.1 μA VEB=5V , IC=0 fT Current Gain-Bandwidth Product 40 170 MHz VCE=5V , IC=50mA ,f=100MHz Cc Collector Capacitance 22 pF VCB=10V , IE=0，f=1MHz 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H368 NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H368
Shantou Huashan Electronic Devices Co.,Ltd. H368