H1266 HUASHAN | Alldatasheet
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Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS General Purpose Application. Switching Application. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage -50 V IC=-100μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage -50 V IC=-1mA, I B=0 BVEBO Emitter-Base Breakdown V oltage -5 V IE=-10μA，IC=0 HFE（1） DC Current Gain 70 400 VCE=-6V , IC=-2mA HFE（2） DC Current Gain 25 VCE=-6V , IC=-150mA VCE(sat) Collector- Emitter Saturation V oltage -0.1 -0.3 V IC=-100mA, IB=-10mA VBE(sat) Base-Emitter Saturation V oltage -1.1 V IC=-100mA, IB=-10mA ICBO Collector Cut-off Current -100 nA VCB=-50V , IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V , IC=0 fT Current Gain-Bandwidth Product 80 MHz VCE=-10V , IC=-10mA Cob Output Capacitance 4 7 pF VCB=-50V , IE=0，f=1MHz █ h FE Classification O Y G R 70—140 120—240 200—400 1―Emitter，E 2―Collector，C 3―Base，B TO-92 H1266 PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd. H1266