GT700P08D3 GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1558-V1.2) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -80 V Continuous Drain Current ID -16 A Pulsed Drain Current (note1) IDM -64 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 69 W Single pulse avalanche energy （note2） EAS 81 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 75 ºC/W Maximum Junction-to-Case RthJC 1.8 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The GT700P08D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -80V l ID (at VGS = -10V) -16A l RDS(ON) (at VGS = -10V) < 75mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging GT700P08D3 DFN3X3-8L GT700P08 5000pcs/Reel DFN3X3-8L pin assignment Schematic diagram

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1558-V1.2) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -80 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -80V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -2.0 -3.0 -4.0 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -2A -- 57 75 mΩ gFS VDS = -5V,ID = -2A -- 6 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -40V, f = 1.0MHz -- 1591 -- pFOutput Capacitance Coss -- 120 -- Reverse Transfer Capacitance Crss -- 5 -- Total Gate Charge Qg VDD = -40V, ID = -2A, VGS = -10V -- 75 -- nCGate-Source Charge Qgs -- 16 -- Gate-Drain Charge Qgd -- 19 -- Turn-on Delay Time td(on) VDD = -40V, ID = -2A, RG = 3Ω -- 18 -- ns Turn-on Rise Time tr -- 20 -- Turn-off Delay Time td(off) -- 55 -- Turn-off Fall Time tf -- 35 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -16 A Body Diode Voltage VSD TJ = 25ºC, ISD = -2A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -2A, VGS = 0V di/dt=-100A/us -- 71 -- nC Reverse Recovery Time Trr -- 49 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1558-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1558-V1.2) DFN3*3-8L Package Information D E1 E L b K c A t e θ SYMBOL COMMON MM MIN NO M MAX A 0.70 0.75 0.85 A1 - - 0.05 b 0.20 0.30 0.40 c 0.10 0.152 0.25 D 3.15 3.30 3.45 D1 3.00 3.15 3.25 D2 2.29 2.45 2.65 E 3.15 3.30 3.45 E1 2.90 3.05 3.20 E2 1.54 1.74 1.94 E3 0.28 0.48 0.65 E4 0.37 0.57 0.77 E5 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.59 0.69 0.89 L 0.30 0.40 0.50 L1 0.06 0.125 0.20 t 0 0.075 0.13 θ 10° 12° 14°