G2014A GOFORD | Alldatasheet
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Description
The G2014A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features DS ⚫ ID (at VGS = 10V) 20V 14A ⚫ RDS(ON) (at VGS = 10V) < 7mΩ ⚫ RDS(ON) (at VGS = 4.5V) < 9mΩ ⚫ RDS(ON) (at VGS = 2.5V) < 11mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging G2014A DFN2*2 N2014 3000pcs/Reel Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Continuous Drain Current ID 14 A Pulsed Drain Current (note1) IDM 56 A Gate-Source Voltage VGS ±12 V Power Dissipation PD 3 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 42 ºC/W Schematic diagram DFN2*2 N-Channel Enhancement Mode Power MOSFET Marking and pin assignment N2014 29961263
www.gofordsemi.com TEL：0755- FAX:0755-29961466 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 0.5 0.75 0.9 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5A -- 4.8 7 mΩVGS = 4.5V, ID = 5A -- 5.5 9 VGS = 2.5V, ID = 5A -- 7 11 Forward Transconductance gFS VDS=6V,ID=5A -- 40 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 1710 -- pFOutput Capacitance Coss -- 232 -- Reverse Transfer Capacitance Crss -- 200 -- Total Gate Charge Qg VDD = 10V, ID = 10A, VGS = 4.5V -- 17.5 -- nCGate-Source Charge Qgs -- 1.5 -- Gate-Drain Charge Qgd -- 4.5 -- Turn-on Delay Time td(on) VDD = 10V, ID = 10A, RG = 3Ω -- 2.5 -- ns Turn-on Rise Time tr -- 7 -- Turn-off Delay Time td(off) -- 49 -- Turn-off Fall Time tf -- 11 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 14 A Body Diode Voltage VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 29961263 G2014A
www.gofordsemi.com TEL：0755- FAX:0755-29961466 Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit 29961263 G2014A
www.gofordsemi.com TEL：0755- FAX:0755-29961466 DFN2×2-6L Package Information 29961263 G2014A