G60KN30IA GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1810-V1.2) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 300 V Continuous Drain Current ID 0.3 A Pulsed Drain Current (note1) IDM 1.2 A Gate-Source Voltage VGS ±30 V Power Dissipation PD 0.71 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 175 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The G60KN30IA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features l VDS 300V l ID (at VGS = 10V) 0.3A l RDS(ON) (at VGS = 10V) < 5Ω l RDS(ON) (at VGS = 4.5V) < 5.3Ω l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G60KN30IA SOT-23 G60KN30 3000pcs/Reel Schematic diagram SOT-23
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1810-V1.2) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 300 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 300V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.8 1.2 1.8 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 0.3A -- 4.2 5 Ω gFS VGS = 5V, ID = 0.3A -- 0.15 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 150V, f = 1.0MHz -- 68 -- pFOutput Capacitance Coss -- 11 -- Reverse Transfer Capacitance Crss -- 3 -- Total Gate Charge Qg VDD = 150V, ID = 0.3A, VGS = 10V -- 2.5 -- nCGate-Source Charge Qgs -- 0.2 -- Gate-Drain Charge Qgd -- 1 -- Turn-on Delay Time td(on) VDD = 150V, ID = 0.3A, RG = 6Ω -- 4 -- ns Turn-on Rise Time tr -- 3.6 -- Turn-off Delay Time td(off) -- 16 -- Turn-off Fall Time tf -- 76 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 0.3 A Body Diode Voltage VSD TJ = 25ºC, ISD = 0.3A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 0.3A, VGS = 0V di/dt=100A/us -- 27 -- nC Reverse Recovery Time Trr -- 51 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1810-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1810-V1.2)