G2012A GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755- FAX:0755-29961466
Description
The G2012A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features ⚫ VDS ⚫ ID (at VGS = 10V) 20V 12A ⚫ RDS(ON) (at VGS = 4.5V) < 12mΩ ⚫ RDS(ON) (at VGS = 2.5V) < 18mΩ ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters Device Package Marking Packaging DFN2*2-G2012A 6L G2012 3000pcs/Reel Absolute Maximum Ratings TC = 25º C,unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDSS 20 V Continuous Drain Current ID 12 A Pulsed Drain Current (note1) IDM 40 A Gate-Source Voltage VGSS ±10 V Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 83 ºC/W Schematic diagram DFN2*2-6L N-Channel Enhancement Mode Power MOSFET Marking and pin assignment 29961263
www.gofordsemi.com TEL：0755- FAX:0755-29961466 Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µ A 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V, TJ = 25ºC -- -- 1 μA Gate-Source Leakage IGSS VGS = ±10V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µ A 0.35 0.7 1 V Drain-Source On-Resistance RDS(on) VGS = 4.5V, ID = 5A -- 7.3 12 mΩ VGS = 2.5V, ID = 5A -- 8.8 18 Forward Transconductance gFS VDS=10V,ID=5A -- 5 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 10V, f = 1.0MHz -- 1255 -- pFOutput Capacitance Coss -- 220 -- Reverse Transfer Capacitance Crss -- 180 -- Total Gate Charge Qg VDD = 10V, ID = 10A, VGS = 10V -- 29 -- nCGate-Source Charge Qgs -- 5.2 -- Gate-Drain Charge Qgd -- 6.3 -- Turn-on Delay Time td(on) VDD = 10V, ID = 5A, RG = 50Ω -- 300 -- ns Turn-on Rise Time tr -- 1000 -- Turn-off Delay Time td(off) -- 4000 -- Turn-off Fall Time tf -- 2500 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 12 A Body Diode Voltage VSD TJ = 25ºC, ISD = 10A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG 29961263
www.gofordsemi.com TEL：0755- FAX:0755-29961466 Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit 29961263
www.gofordsemi.com TEL：0755- FAX:0755-29961466 DFN2×2-6L Package Information E D e b c L A h LASER MARK PIN 1 I.D. /gid00053 /gid00048 /gid00049 /gid00001/gid00055 /gid00042/gid00038 /gid00056 /gid00052 /gid00042/gid00037 /gid00038 /gid00001/gid00055 /gid00042/gid00038 /gid00056 /gid00035 /gid00048 /gid00053 /gid00053 /gid00048 /gid00046 /gid00001/gid00055 /gid00042/gid00038 /gid00056 SYMBOL MIN NOM MAX mm 0.70 0.75 0.80 NA 0.02 0.05 0.20 0.27 0.34 1.95 2.00 2.07 0.80 0.90 1.00 0.90 1.00 1.10 0.20 0.30 0.40 0.65 0.75 0.85 0.20 0.25 0.35 0.20 0.25 0.30 0.65BSC A b 0.18 0.20 0.25c 1.95 2.00 2.07D E L h e COMMON DIMENSIONS 29961263