G40P03K GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1553-V1.3) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Continuous Drain Current ID -40 A Pulsed Drain Current (note1) IDM -160 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 78 W Single pulse avalanche energy （note2） EAS 72 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.6 ºC/W P-Channel Enhancement Mode Power MOSFET
Description
The G40P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -30V l ID (at VGS = -10V) -40A l RDS(ON) (at VGS = -10V) < 10mΩ l RDS(ON) (at VGS = -4.5V) < 14mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging G40P03K TO-252 G40P03 2500pcs/Reel Schematic diagram TO-252
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1553-V1.3) Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID =- 250µA -1.0 -1.7 -2.5 V Drain-Source On-Resistance RDS(on) mΩ gFS VDS = -5V,ID = -20A -- 52 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1.0MHz -- 2622 -- pFOutput Capacitance Coss -- 348 -- Reverse Transfer Capacitance Crss -- 346 -- Total Gate Charge Qg VDD = -15V, ID = -20A, VGS = -10V -- 50 -- nCGate-Source Charge Qgs -- 9 -- Gate-Drain Charge Qgd -- 12 -- Turn-on Delay Time td(on) VDD = -15V, ID = -20A, RG = -3Ω -- 18 -- ns Turn-on Rise Time tr -- 12.5 -- Turn-off Delay Time td(off) -- 125 -- Turn-off Fall Time tf -- 66 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -40 A Body Diode Voltage VSD TJ = 25ºC, ISD = -20A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -20A, VGS = 0V di/dt=-500A/us -- 62 -- nC Reverse Recovery Time Trr -- 32 -- ns Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1553-V1.3) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1553-V1.3) D A A1L (L1) θ H c E b e C O M M O N D I M E N S I O N S SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 0.50 - 1.00 L5 1.65 1.80 1.95 θ 0° - 8°