3400L GOFORD | Alldatasheet
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Technical content
GOFORD &. 3400L
Description
The 3400L uses advanced trench technology to provide D excellent Rosion), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. General Features Ss e Schematic diagram Voss | Ros(on) | Rosion) | Roscon) | Ip D I@ 10v (Typ.)| @a.5v(TyP.\\@2.5v(Typ-) {3 = J @ High power and current handing capability rey a Is © Surface mount package Marking and pin assignment @ RoHS Compliant Application @ PWM applications @ Load switch SOT-23-3L @ Power management
Ordering Information
[Partnumber [Waring [case ——~—S*SSSC* caging Absolute Maximum Ratings (T,=25‘Cunless otherwise noted) [Parameter | Symbot[himit | unit Ne GC nS Ce Thermal Characteristic [Tremal Resistance inciontoanben™? «Rm CdS Electrical Characteristics (Ta=25‘C unless otherwise noted) [Parameter | Symbot_ [Condition | min | Typ | Max | unit | Drain-Source Breakdown Voltage Ves=0V Ip=250pA. [3] -]- ]v | [ze Gate Voge Dan Conent [tes | veravowov | - | [03 | 8 www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466 (QD)
On Characteristics "°° Drain-Source On-State Resistance Vos=4.5V, Ip=2.8A | - | 21 | 33 | ma | Vesrtov.tor2ea | - | 18 | a7 | mo | Dynamic Characteristics“ os=15V, Ves=0V, Output Capacitance Reverse Transfer Capacitance [fa]. | er | Switching Characteristics “°°” Tum-on Delay Time [-[ssf - [ons | Tum-Off Delay Time Vesrt0vReoraa [| - | 26 | - [ns | Tum-Off Fai Time [| | - [4 f - [ons | Total Gate Charge | a | [-[esf - | nc | Vos=15V,Ip=5.6A, Gate-Source Charge | | [= fast - | nc | Ves=4.5V Gate-Drain Charge [os | [- [3 | - J rc | Drain-Source Diode Characteristics Diode Forward Current “7 Po Pe Ta Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, ts 10 sec. 3. Pulse Test: Pulse Width < 300us, Duty Cycle < 2%. 4, Guaranteed by design, not subject to production www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466 (QD)
Typical Electrical and Thermal Characteristics Vdd toa VA RI taon) taco
0 D Vout 90% 90%"
G 10% 10% 90% s Vin 50% 50% 10% = PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms 20 8 15 Lo = £ = B4 g € & 8 a © 05 6? 0 0 ° 2 80 75 100 125 150 0 25 50 75 100 125 150, T,-Junction Temperature(‘C) T,-Junction Temperature(‘C) Figure 3 Power Dissipation Figure 4 Drain Current PROT TT] fech tt 20 & 50 x 45V 8 5 % 40 [ra yp) | e ee 0 10 0 1 2 3 4 5 0 5 10 15 20 Vds Drain-Source Voltage (V) Ip- Drain Current (A) Figure 5 Output Characteristics Figure 6 Drain-Source On-Resistance www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466 (QD)
A o_o Sn E = = | | L_| iD J G H Cc ee ee ee ee ew fw tm ee ee ee www.gofordsemi.com TEL: 0755-29961263 FAX:0755 -29961466 (QD)