GT6K2P10IH GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1767-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS -100 V Continuous Drain Current ID -1 A Pulsed Drain Current (note1) IDM -4 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.4 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 89 ºC/W P-Channel Enhancement Mode Power MOSFET

Description

The GT6K2P10IH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS -100V l ID (at VGS = -10V) -1A l RDS(ON) (at VGS = -10V) < 670mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging GT6K2P10IH SOT-23 GT6K2P10 3000pcs/Reel Schematic diagram SOT-23

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1767-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = -100V, VGS = 0V -- -- -1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.0 -2.45 -3.0 V Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -1A -- 545 670 mΩ gFS VDS = -5V,ID = -1A -- 3 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = -50V, f = 1.0MHz -- 253 -- pFOutput Capacitance Coss -- 24 -- Reverse Transfer Capacitance Crss -- 5 -- Total Gate Charge Qg VDD = -50V, ID = -1A, VGS = -10V -- 10 -- nCGate-Source Charge Qgs -- 1 -- Gate-Drain Charge Qgd -- 4 -- Turn-on Delay Time td(on) VDD = -50V, ID = -1A, RG = 6Ω -- 4 -- ns Turn-on Rise Time tr -- 5 -- Turn-off Delay Time td(off) -- 16 -- Turn-off Fall Time tf -- 44 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- -1 A Body Diode Voltage VSD TJ = 25ºC, ISD = 1A, VGS = 0V -- -- -1.2 V Reverse Recovery Charge Qrr IF = -1A, VGS = 0V di/dt=-100A/us -- 157 -- nC Reverse Recovery Time Trr -- 60 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1767-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1767-V1.0)