GT55N06D5 GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1359) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current ID 45 A Pulsed Drain Current (note1) IDM 180 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 69 W Single pulse avalanche energy （note2） EAS 49 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 17 ºC/W Maximum Junction-to-Case RthJC 1.8 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The GT55N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 60V l ID (at VGS = 10V) 45A l RDS(ON) (at VGS = 10V) < 9mΩ l RDS(ON) (at VGS = 4.5V) < 13mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging GT55N06D5 DFN5*6-8L GT55N06 5000pcs/Reel
Ordering Information
DFN5*6-8L
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1359) Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.4 2.4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 14A -- 7 9 mΩ VGS = 4.5V, ID = 10A -- 10 13 gFS VDS = 5V,ID = 14A -- 30 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 1085 -- pFOutput Capacitance Coss -- 316 -- Reverse Transfer Capacitance Crss -- 22 -- Total Gate Charge Qg VDD = 30V, ID = 20A, VGS = 10V -- 31 -- nCGate-Source Charge Qgs -- 6 -- Gate-Drain Charge Qgd -- 5 -- Turn-on Delay Time td(on) VDD = 30V, ID = 20A, RG = 3Ω -- 10.5 -- ns Turn-on Rise Time tr -- 4.5 -- Turn-off Delay Time td(off) -- 29.5 -- Turn-off Fall Time tf -- 8 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 45 A Body Diode Voltage VSD TJ = 25ºC, ISD = 14A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF =20A, VGS = 0V di/dt=500A/us -- 58 -- nC Reverse Recovery Time Trr -- 17 -- ns
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1359) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1359)