GT1K2N10I GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2078.08-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Continuous Drain Current ID 3.3 A Pulsed Drain Current (note1) IDM 13.2 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 1.6 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s RthJA 78 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The GT1K2N10I uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 100V l ID (at VGS = 10V) 3.3A l RDS(ON) (at VGS = 10V) < 110mΩ l RDS(ON) (at VGS = 4.5V) < 135mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging GT1K2N10I SOT-23 GT1K2N10 3000pcs/Reel Schematic diagram SOT-23
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2078.08-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.2 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 3A -- 91 110 mΩ VGS = 4.5V, ID = 2A -- 113 135 gFS VGS = 5V, ID = 3A -- 3 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 145 -- pFOutput Capacitance Coss -- 40 -- Reverse Transfer Capacitance Crss -- 3 -- Total Gate Charge Qg VDD = 50V, ID = 3A, VGS = 10V -- 4.2 -- nCGate-Source Charge Qgs -- 0.6 -- Gate-Drain Charge Qgd -- 1.1 -- Turn-on Delay Time td(on) VDD = 50V, ID = 3A, RG = 2Ω -- 15 -- ns Turn-on Rise Time tr -- 4 -- Turn-off Delay Time td(off) -- 21 -- Turn-off Fall Time tf -- 3 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 3.3 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 3A, VGS = 0V di/dt=100A/us -- 40 -- nC Reverse Recovery Time Trr -- 33 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2078.08-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2078.08-V1.0)