GT15N10 GOFORD | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
Description
- High power and current handing capability
- Surface mount package Schematic diagram Marking and pin assignment SOP-8 General Features V D S S R D S O N I D 8.9 A 4.5V @ (Typ) Ω100V m R D S O N 6.6 10V @ (Typ) Ω m
- Trench Power MV MOSFET technology
- Low R DS(ON)
- Low Gate Charge
- Optimized for fast-switching applications
Applications
Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Symbol V DS V GS I DM E AS 150 T J , T STG Symbol t ≤ 10s Steady-State Steady-State R θJC Power Dissipation A T A =25°C P DSM T A =70°C W3.1 2.0 A Gate-Source Voltage Avalanche energy L=0.3mH C mJ °C/W Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 40 °C/W °C/W75 R θJA Parameter Maximum Units Thermal Characteristics Drain-Source Voltage Junction and Storage Temperature Range °C-55 to 150 100 ±20 V Pulsed Drain Current C A V Continuous Drain Current G T A =25°C T A =100°C I D 9.5 Maximum UnitsParameter Absolute Maximum Ratings T A =25°C unless otherwise noted RoHS Compliant GT15N10
Ordering Information
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
T J =55°C 5 I GSS ±100 nA V GS(th) 1.3 1.9 2.5 V 6.6 7.8 T J =125°C 11.6 13.7 8.9 10.5 g FS 30 S V SD 0.7 0.95 V I S 48 A C iss 2808 pF C oss 961 pF C rss 23 pF R g 2 Q g (10V) 50 nC Q g (4.5V) 33 nC Q gs 17 nC Q gd 11 nC t D(on) 15 ns t r 12 ns t D(off) 25 ns t f 13 ns t rr 45 ns Q rr 140 nC Body Diode Reverse Recovery Time I F =15A,di/dt=500A/µs Body Diode Reverse Recovery charge I F =15A,di/dt=500A/µs Gate Source Charge Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS Turn-on Delay Time V GS =10V, V DS =50V, R L =2.5Ω, R GEN =3Ω Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge V GS =10V, V DS =50V, I D =7.5A V GS =10V, I D =7.5A I S =1A,V GS =0V Gate resistance V GS =0V, V DS =0V, f=1MHz V DS =5V, I D =7.5A Static Drain-Source On-Resistance Diode Forward Voltage Diode Forward Voltage Electrical Characteristics (T J =25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions I DSS Drain-Source Breakdown Voltage I D =250A, V GS =0V V DS GS I D =250A V DS =100V, V GS =0V V DS =0V, V GS =±20V Reverse Transfer Capacitance V GS =0V, V DS =15V, f=1MHz Zero Gate Voltage Drain Current Gate-Body leakage current Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance DYNAMIC PARAMETERS R DS(ON) Gate Threshold Voltage V GS =4.5V, I D =7.5A A. The value of R θJA is measured with the device mounted on 1in2 FR‐4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =150°C, using junction‐to‐case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction‐to‐case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. GT15N10 GOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) ton td(off) tf toff VddVgs Id VDC L Vgs Vds BV I Vds AR DSS E = 1/2 LIARAR Figure A: Gate Charge Test Circuit & Waveforms Figure B: Figure C: Unclamped Inductive Switching (UIS) Test VddVgs Vgs Rg DUT VDC Id Vgs I Ig Vgs VDC DUT L Vgs Vds IsdIsd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR dI/dt IRM rr VddVdd Q = - Idt trr Figure D: Diode Recovery Test Circuit & Waveforms GT15N10 GOFORD www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466