GT105N10K GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1547) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Continuous Drain Current ID 60 A Pulsed Drain Current (note1) IDM 240 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 83 W Single pulse avalanche energy （note2） EAS 72 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 42 ºC/W Maximum Junction-to-Case RthJC 1.5 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 100V l ID (at VGS = 10V) 60A l RDS(ON) (at VGS = 10V) < 10.5mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging GT105N10K TO-252 GT105N10 2500psc/Reel

Ordering Information

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1547) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 2.9 4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 35A -- 8.5 10.5 mΩ gFS VGS = 5V, ID = 35A -- 52 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 1574 -- pFOutput Capacitance Coss -- 644 -- Reverse Transfer Capacitance Crss -- 7 -- Total Gate Charge Qg VDD = 50V, ID = 35A, VGS = 10V -- 16 -- nCGate-Source Charge Qgs -- 5 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = 50V, ID = 35A, RG = 3Ω -- 7.5 -- ns Turn-on Rise Time tr -- 2.5 -- Turn-off Delay Time td(off) -- 16.4 -- Turn-off Fall Time tf -- 3 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 60 A Body Diode Voltage VSD TJ = 25ºC, ISD = 35A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 35A, VGS = 0V di/dt=500A/us -- 132 -- nC Reverse Recovery Time Trr -- 30 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1547) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1547) Symbol Dimensions in Millimeters MIN. NOM. MAX. A 2.2 2.3 2.4 A1 0 0.2 A2 0.97 1.07 1.17 b 0.68 0.78 0.9 b3 5.2 5.33 5.5 c 0.43 0.53 0.63 D 5.98 6.1 6.22 D1 5.30REF E 6.4 6.6 6.8 E1 4.63 e 2.286BSC H 9.4 10.1 10.5 L 1.38 1.5 1.75 L1 2.90REF L2 0.51BSC L3 0.88 1.28 L4 0.5 1 L5 1.65 1.8 1.95 θ 0° 8°