GT100N12MA GOFORD | Alldatasheet
Document overview
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1660.08-V1.2) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 120 V Continuous Drain Current TC = 25ºC ID A TC = 100ºC 44 Pulsed Drain Current (note1) IDM 280 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 100 W Single pulse avalanche energy （note2） EAS 156 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.25 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The GT100N12MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101Qualified General Features l VDS 120V l ID (at VGS = 10V) 70A l RDS(ON) (at VGS = 10V) < 10mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters
Ordering Information
Device Package Marking Packaging GT100N12MA TO-263 GT100N12 800pcs/Reel Schematic diagram TO-263
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1660.08-V1.2) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 120 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 3.0 4.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 7.4 10 mΩ gFS VGS = 5V, ID = 20A -- 25 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 60V, f = 1.0MHz -- 2990 -- pFOutput Capacitance Coss -- 335 -- Reverse Transfer Capacitance Crss -- 4 -- Total Gate Charge Qg VDD = 60V, ID = 20A, VGS = 10V -- 45 -- nCGate-Source Charge Qgs -- 16 -- Gate-Drain Charge Qgd -- 11 -- Turn-on Delay Time td(on) VDD = 60V, ID = 20A, RG = 1.6Ω -- 15 -- ns Turn-on Rise Time tr -- 10 -- Turn-off Delay Time td(off) -- 34 -- Turn-off Fall Time tf -- 8 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 70 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 20A, VGS = 0V di/dt=100A/us -- 106 -- nC Reverse Recovery Time Trr -- 60 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω The table shows the minimum avalanche energy, which is 420mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1660.08-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1660.08-V1.2)