GT100N04D3 GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1527) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Continuous Drain Current ID 13 A Pulsed Drain Current (note1) IDM 52 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 23 W Single pulse avalanche energy （note2） EAS 14 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 70 ºC/W Maximum Junction-to-Case RthJC 5.3 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The GT100N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 40V l ID (at VGS = 10V) 13A l RDS(ON) (at VGS = 10V) < 10mΩ l RDS(ON) (at VGS = 4.5V) < 16mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging GT100N04D3 DFN3X3-8L GT100N04 5000psc/Reel

Ordering Information

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1527) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.7 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 5A -- 7 10 mΩ VGS = 4.5V, ID = 5A -- 11 16 gFS VGS = 5V, ID = 5A -- 22 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1.0MHz -- 642 -- pFOutput Capacitance Coss -- 117 -- Reverse Transfer Capacitance Crss -- 115 -- Total Gate Charge Qg VDD = 20V, ID = 20A, VGS = 10V -- 32 -- nCGate-Source Charge Qgs -- 7 -- Gate-Drain Charge Qgd -- 3 -- Turn-on Delay Time td(on) VDD = 20V, ID = 20A, RG = 1.6Ω -- 6.5 -- ns Turn-on Rise Time tr -- 3 -- Turn-off Delay Time td(off) -- 21 -- Turn-off Fall Time tf -- 3 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 13 A Body Diode Voltage VSD TJ = 25ºC, ISD = 5, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 20A, VGS = 0V di/dt=100A/us -- 16 -- nC Reverse Recovery Time Trr -- 28 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD= 40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1527) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1527) DFN3x3-8L Package Information D E1 E L b K c A t e θ SYMBOL COMMON MM MIN NO M MAX A 0.70 0.75 0.85 A1 - - 0.05 b 0.20 0.30 0.40 c 0.10 0.152 0.25 D 3.15 3.30 3.45 D1 3.00 3.15 3.25 D2 2.29 2.45 2.65 E 3.15 3.30 3.45 E1 2.90 3.05 3.20 E2 1.54 1.74 1.94 E3 0.28 0.48 0.65 E4 0.37 0.57 0.77 E5 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.59 0.69 0.89 L 0.30 0.40 0.50 L1 0.06 0.125 0.20 t 0 0.075 0.13 θ 10° 12° 14°