GT035N10Q GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1819-V1.1） Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Continuous Drain Current ID 190 A Pulsed Drain Current (note1) IDM 760 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 250 W Single pulse avalanche energy （note2） EAS 441 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W Maximum Junction-to-Case RthJC 0.5 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The GT035N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 100V l ID (at VGS = 10V) 190A l RDS(ON) (at VGS = 10V) < 3.5mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging GT035N10Q TO-247 GT035N10 30pcs/Tube Schematic diagram TO-247 G D S

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1819-V1.1） Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.0 3.0 4.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 2.5 3.5 mΩ gFS VGS = 5V, ID =30A -- 69 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz -- 6516 -- pFOutput Capacitance Coss -- 2027 -- Reverse Transfer Capacitance Crss -- 155 -- Total Gate Charge Qg VDD = 50V, ID = 30A, VGS = 10V -- 68 -- nCGate-Source Charge Qgs -- 26 -- Gate-Drain Charge Qgd -- 31 -- Turn-on Delay Time td(on) VDD = 50V, ID = 30A, RG = 3Ω -- 27 -- ns Turn-on Rise Time tr -- 21 -- Turn-off Delay Time td(off) -- 78 -- Turn-off Fall Time tf -- 30 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 190 A Body Diode Voltage VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF =30A, VGS = 0V di/dt=100A/us -- 680 -- nC Reverse Recovery Time Trr -- 132 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1819-V1.1） Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466（A1819-V1.1）