GT035N06T GOFORD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1485）

Description

The GT035N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 60V l ID (at VGS = 10V) 170A l RDS(ON) (at VGS = 10V) < 3.5mΩ l RDS(ON) (at VGS = 4.5V) < 4.5mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters l Synchronous Rectification Device Package Marking Packaging GT035N06T TO-220 GT035N06 50pcs/Tube Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Continuous Drain Current ID 170 A Pulsed Drain Current (note1) IDM 300 A Gate-Source Voltage VGS ±20 V Single pulse avalanche energy （note3） EAS 256 mJ Power Dissipation PD 215 W Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RthJA 50 ºC/W Maximum Junction-to-Case RthJC 0.58 ºC/W N-Channel Enhancement Mode Power MOSFET Schematic Diagram TO-220 Marking and pin assignment

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1485） Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.2 1.6 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 2.5 3.5 mΩ gFS VDS = 5V,ID = 20A -- 60 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 5064 -- pFOutput Capacitance Coss -- 1100 -- Reverse Transfer Capacitance Crss -- 48 -- Total Gate Charge Qg VDD = 30V, ID = 20A, VGS = 10V -- 70 -- nCGate-Source Charge Qgs -- 21 -- Gate-Drain Charge Qgd -- 16 -- Turn-on Delay Time td(on) VDD = 30V, ID = 50A, RG = 3Ω -- 16 -- ns Turn-on Rise Time tr -- 9 -- Turn-off Delay Time td(off) -- 36 -- Turn-off Fall Time tf -- 11 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 125 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Chrage Qrr IF=20A, di/dt=500A/us 150 -- nC Reverse Recovery Time Trr 30 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 20A, VDD = 40V, RG = 25Ω, Starting TJ = 25°C 3. Identical low side and high side switch with identical RG Forward Transconductance

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1485） Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466 （A1485） Symbol Dimensions in Millimeters MIN. NOM. MAX. A 4.37 4.57 4.7 A1 1.25 1.3 1.4 A2 2.2 2.4 2.6 b 0.7 0.8 0.95 b2 1.7 1.27 1.47 c 0.45 0.5 0.6 D 15.1 15.6 16.1 D1 8.8 9.1 9.4 D2 5.5 E 9.7 10 10.3 e 2.54BSC e1 5.08BSC H1 6.25 6.5 6.85 L 12.75 13.5 13.8 L1 3.1 3.4 ∅ P 3.4 3.6 3.8 Q 2.6 2.8 3