GT030N08D5A GOFORD | Alldatasheet

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Technical content

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2009-V1.0) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 80 V Continuous Drain Current ID 155 A Pulsed Drain Current (note1) IDM 620 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 140 W Single pulse avalanche energy （note2） EAS 272 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 0.9 ºC/W N-Channel Enhancement Mode Power MOSFET

Description

The GT030N08D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified General Features l VDS 80V l ID (at VGS = 10V) 155A l RDS(ON) (at VGS = 10V) < 3mΩ l RDS(ON) (at VGS = 4.5V) < 3.7mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters

Ordering Information

Device Package Marking Packaging GT030N08D5A DFN5X6-8L GT030N08 5000pcs/Reel Schematic diagram DFN5X6-8L pin assignment PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2009-V1.0) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 80 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 2.0 3.0 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A -- 2.4 3 mΩ gFS VGS = 5V, ID = 20A -- 72 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 40V, f = 1.0MHz -- 5300 -- pFOutput Capacitance Coss -- 875 -- Reverse Transfer Capacitance Crss -- 85 -- Total Gate Charge Qg VDD = 40V, ID = 20A, VGS = 10V -- 75 -- nCGate-Source Charge Qgs -- 23 -- Gate-Drain Charge Qgd -- 15 -- Turn-on Delay Time td(on) VDD = 40V, ID = 20A, RG = 1.6Ω -- 24 -- ns Turn-on Rise Time tr -- 14 -- Turn-off Delay Time td(off) -- 50 -- Turn-off Fall Time tf -- 16 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 155 A Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 20A, VGS = 0V di/dt=100A/us -- 130 -- nC Reverse Recovery Time Trr -- 66 -- ns Forward Transconductance Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω The table shows the minimum avalanche energy, which is 756mJ when the device is tested until failure 3. Identical low side and high side switch with identical RG PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2009-V1.0) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit PRELIMINARY

www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A2009-V1.0) PRELIMINARY