GT013N04D5 GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1591-V1.2) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Continuous Drain Current ID 195 A Pulsed Drain Current (note1) IDM 300 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 96 W Single pulse avalanche energy （note2） EAS 25 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W Maximum Junction-to-Case RthJC 1.3 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The GT013N04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 40V l ID (at VGS = 10V) 195A l RDS(ON) (at VGS = 10V) < 1.7mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging GT013N04D5 DFN5*6-8L GT013N04 5000psc/Reel
Ordering Information
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1591-V1.2) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 3 4 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 1.4 1.7 mΩ gFS VGS = 5V, ID = 30A -- 60 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1.0MHz -- 3927 -- pFOutput Capacitance Coss -- 937 -- Reverse Transfer Capacitance Crss -- 886 -- Total Gate Charge Qg VDD = 20V, ID = 20A, VGS = 10V -- 50 -- nCGate-Source Charge Qgs -- 11.5 -- Gate-Drain Charge Qgd -- 4 -- Turn-on Delay Time td(on) VDD = 20V, ID = 20A, RG = 3Ω -- 11 -- ns Turn-on Rise Time tr -- 3.5 -- Turn-off Delay Time td(off) -- 36 -- Turn-off Fall Time tf -- 3 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 195 A Body Diode Voltage VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 20A, VGS = 0V di/dt=500A/us -- 45 -- nC Reverse Recovery Time Trr -- 17 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1591-V1.2) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1591-V1.2)