GT007N04TL GOFORD | Alldatasheet
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Technical content
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1592-V1.3) Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDS 40 V Continuous Drain Current ID 285 A Pulsed Drain Current (note1) IDM 1140 A Gate-Source Voltage VGS ±20 V Power Dissipation PD 156 W Single pulse avalanche energy （note2） EAS 361 mJ Operating Junction and Storage Temperature Range TJ, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient RthJA 40 ºC/W Maximum Junction-to-Case RthJC 0.8 ºC/W N-Channel Enhancement Mode Power MOSFET
Description
The GT007N04TL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS 40V l ID (at VGS = 10V) 285A l RDS(ON) (at VGS = 10V) < 1.5mΩ l RDS(ON) (at VGS = 4.5V) < 2.0mΩ l 100% Avalanche Tested l RoHS Compliant Application l Power switch l DC/DC converters Device Package Marking Packaging GT007N04TL TOLL-8L GT007N04 2000pcs/Reel
Ordering Information
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www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1592-V1.3) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.5 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 30A -- 1.2 1.5 mΩ gFS VGS = 5V, ID = 30A -- 86 -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1.0MHz -- 7363 -- pFOutput Capacitance Coss -- 1842 -- Reverse Transfer Capacitance Crss -- 1511 -- Total Gate Charge Qg VDD = 20V, ID = 30A, VGS = 10V -- 163 -- nCGate-Source Charge Qgs -- 22 -- Gate-Drain Charge Qgd -- 33 -- Turn-on Delay Time td(on) VDD = 20V, ID = 30A, RG = 3Ω -- 13 -- ns Turn-on Rise Time tr -- 18 -- Turn-off Delay Time td(off) -- 135 -- Turn-off Fall Time tf -- 52 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 285 A Body Diode Voltage VSD TJ = 25ºC, ISD = 30A, VGS = 0V -- -- 1.2 V Reverse Recovery Charge Qrr IF = 30A, VGS = 0V di/dt=500A/us -- 78 -- nC Reverse Recovery Time Trr -- 26 -- ns Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition : Tj=25℃ ,VDD=40V,VGS=10V,L=0.5mH,Rg=25Ω 3. Identical low side and high side switch with identical RG Forward Transconductance
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1592-V1.3) Gate Charge Test Circuit EAS Test Circuit Switch Time Test Circuit
www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(A1592-V1.3)