GPU150HF120D2 HMSEMI | Alldatasheet
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1200V150A,VCE(sat)(typ.)=3.2V@150A Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxin’s IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolute Maxinmun Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ± 30 V IC Continuous Collector Current ( TC=25℃) 300 A Continuous Collector Current ( TC=100℃) 150 A ICM Pulsed Collector Current (Note 1) 300 A IF Diode Continuous Forward Current ( TC=100℃) 150 A IFM Diode Maximum Forward Current (Note 1) 600 A tsc Short Circuit Withstand Time 10 µs tsc (Max) Maximum Short Circuit Withstand Time >40 µs Isc Short Circuit Current 1200 A PD Maximum Power Dissipation ( TC=25℃) 735 W Maximum Power Dissipation ( TC=100℃) 294 W TJ Operating Junction Temperature Range -55 to +150 ℃ TSTG Storage Temperature Range -55 to +150 ℃ Thermal Characteristics Symbol Parameter Max. Units Rth j-c Thermal Resistance, Junction to case for per IGBT 0.34 ℃/W Rth j-c Thermal Resistance, Junction to case for per Diode 0.60 ℃/W Weight Weight of Module 340 g
- 2 - Rev1. 2017 Total 3 Pages GPU150HF120D2 Electrical Characteristicsof IGBT(TC=25℃unless otherwise noted ) Symbol Parameter TestConditions Min. Typ. Max. Units BVCES Collector-EmitterBreakdownVoltage VGE=0V,IC= 250µA 1200 - - V ICES Collector-Emitter Leakage Current VCE= 1200V, VGE=0V - - 250 µA IGES Gate Leakage Current, Forward VGE=30V, VCE=0V - - 100 nA Gate Leakage Current, Reverse VGE= -30V, VCE=0V - - -100 nA VGE(th) GateThresholdVoltage VGE=VCE,IC=250µA 4.5 - 5.7 V VCE(sat) Collector-Emitter Saturation Voltage VGE=15V,IC=150A - 3.2 3.6 V Qg Total Gate Charge VCC=960V，VGE=15V IC=150A 1300 nC t d(on) Turn-on Delay Time VCC=600V VGE=±15V IC=150A RG=10 Inductive Load TC=25℃ - 68 - ns t r Turn-on Rise Time - 92 - ns t d(off) Turn-off Delay Time - 640 - ns t f Turn-off Fall Time - 110 - ns Eon Turn-on Switching Loss - 9.0 - mJ Eoff Turn-off Switching Loss - 7.3 - mJ Ets Total Switching Loss - 16.3 - mJ Cies InputCapacitance VCE=25V VGE=0V f = 1MHz - 13 - nF Coes OutputCapacitance - 1.8 - nF Cres ReverseTransferCapacitance - 1.05 - nF RGint Integrated gate resistor f=1M;Vpp=1V 1.3 Ω Electrical Characteristics of Diode(TC=25℃unless otherwise noted) Symbol Parameter TestConditions Min. Typ. Max. Units VF Diode ForwardVoltage IF=150A - 1.9 V t r r Diode Reverse Recovery Time VCE = 600V IF=150A dIF/dt = 500A/ µs - 126 ns I r r Diode peak Reverse Recovery Current - 85 A Qr r Diode Reverse Recovery Charge - 7.5 μC Notes： 1.Repetitive Rating: Pulse width limited by maximum junction temperature
- 3 - Rev1. 2017 Total 3 Pages GPU150HF120D2 Internal Circuit: Package Dimension Dimensions in Millimeters