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1200V200A,VCE(sat)(typ.)=2.1V@200A Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description DAXIN’s IGBTs offer lower losses and higher energy for application such as motor drive ,UPS, inverter and other soft switching applications. Absolute Maxinmun Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±30 V IC Continuous Collector Current ( TC=25℃) 400 A Continuous Collector Current ( TC=100℃) 200 A ICM Pulsed Collector Current (Note 1) 400 A IF Diode Continuous Forward Current ( TC=100℃) 200 A IFM Diode Maximum Forward Current (Note 1) 800 A tsc Short Circuit Withstand Time 10 µs tsc (Max) Maximum Short Circuit Withstand Time >40 µs Isc Short Circuit Current 1800 A PD Maximum Power Dissipation ( TC=25℃) 862 W Maximum Power Dissipation ( TC=100℃) 344 W TJ Operating Junction Temperature Range -55 to +150 ℃ TSTG Storage Temperature Range -55 to +150 ℃ Thermal Characteristics Symbol Parameter Max. Units Rth j-c Thermal Resistance, Junctio n to case for per IGBT 0.29 ℃/W Rth j-c Thermal Resistance, Junction to case for per Diode 0.46 ℃/W Weight Weight of Module 340 g
- 2 - Rev1. 2017 Total 3 Pages GPK200HF120D2 Electrical Characteristicsof IGBT(TC=25℃unless otherwise noted ) Symbol Parameter TestConditions Min. Typ. Max. Units BVCES Collector-EmitterBreakdownVoltage VGE=0V,IC= 250µA 1200 - - V ICES Collector-Emitter Leakage Current VCE= 1200V, VGE=0V - - 250 µA IGES Gate Leakage Current, Forward VGE=30V, VCE=0V - - 100 nA Gate Leakage Current, Reverse VGE= -30V, VCE=0V - - -100 nA VGE(th) GateThresholdVoltage VGE=VCE,IC=250µA 4.5 - 5.7 V VCE(sat) Collector-Emitter Saturation Voltage VGE=15V,IC=200A - 2 . 1 2.4 V Qg Total Gate Charge VCC=960V，VGE=15V IC=200A 1740 n C t d(on) Turn-on Delay Time VCC=600V VGE=±15V IC=200A RG=10 Inductive Load TC=25℃ - 160 - ns t r Turn-on Rise Time - 145 - ns t d(off) Turn-off Delay Time - 1044 - ns t f Turn-off Fall Time - 128 - ns Eon Turn-on Switching Loss - 2 6 - mJ Eoff Turn-off Switching Loss - 1 8 - mJ Ets Total Switching Loss - 4 4 - mJ Cies InputCapacitance VCE=25V VGE=0V f = 1MHz - 17.5 - nF Coes OutputCapacitance - 2 . 4 - nF Cres ReverseTransferCapacitance - 1 . 4 - nF RGint Integrated gate resistor f=1M;Vpp=1V 2 . 5 Ω Electrical Characteristics of Diode(TC=25℃unless otherwise noted) Symbol Parameter TestConditions Min. Typ. Max. Units VF Diode ForwardVoltage IF=200A - 1.9 V t r r Diode Reverse Recovery Time VCE = 600V IF=200A dIF/dt = 500A/µs - 158 ns I r r Diode peak Reverse Recovery Current - 13.5 A Qr r Diode Reverse Recovery Charge - 9.5 μC Notes： 1.Repetitive Rating: Pulse width limited by maximum junction temperature
- 3 - Rev1. 2017 Total 3 Pages GPK200HF120D2 Internal Circuit: Package Dimension Dimensions in Millimeters