GP801DDM18

GP801DDM18 DYNEX | Alldatasheet

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Technical content

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.1/10 www.dynexsemi.com

FEATURES

I Low VCE(SAT) I 800A Per Switch I High Thermal Cycling Capability I Non Punch Through Silicon I Isolated MMC Base with AlN Substrates

APPLICATIONS

I Low Loss System Retrofit The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP801DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low V CE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As: GP801DDM18 Note: When ordering, please use the complete part number. KEY PARAMETERS VCES 1800V VCE(sat) (typ) 2.6V IC (max) 800A IC(PK) (max) 1600A GP801DDM18 Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Replaces October 2000, version DS5292-2.5 DS5292-3.0 January 2001 Fig. 1 Dual switch circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: D (See Package Details for further information) 3(C1)4(E2)2(C2) 12(C2) 7(C1) 11(G2) 10(E2) 5(E1) 6(G1) 1(E1) 2412

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting - M6 Electrical connections - M4 Electrical connections - M8 Parameter Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) Thermal resistance - case to heatsink (per module) Junction temperature Storage temperature range Screw torque THERMAL AND MECHANICAL RATINGS ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. T case = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Test Conditions VGE = 0V Tcase = 80˚C 1ms, Tcase = 110˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz Units V V A A W V Max. 1800 ±20 800 1600 6940 4000 Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Symbol R th(j-c) R th(j-c) R th(c-h) Tj Tstg Units ˚C/kW ˚C/kW ˚C/kW Nm Nm Nm Max. 150 125 125 Min. –40

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.3/10 www.dynexsemi.com Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES , Tcase = 125˚C VGE = ±20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125˚C DC t p = 1ms IF = 800A IF = 800A, Tcase = 125˚C VCE = 25V, VGE = 0V, f = 1MHz Parameter Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage Input capacitance Module inductance

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise. Symbol ICES IGES VGE(TH) VCE(sat) IF IFM VF C ies LM Units mA mA µA V V V A A V V nF nH Max. 6.5 3.2 800 1600 2.5 2.6 Typ. 5.5 2.6 3.3 2.2 2.3 Min. 4.5

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Units ns ns mJ ns ns mJ µC A mJ Max. 1200 350 600 400 300 400 240 Typ. 1000 250 500 300 200 300 180 450 120 Min. Test Conditions IC = 800A VGE = ±15V VCE = 900V R G(ON) = RG(OFF) = 2.2Ω L ~ 100nH IF = 800A, VR = 50% VCES , dIF/dt = 3500A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Q rr Irr EREC Tcase = 125˚C unless stated otherwise Units ns ns mJ ns ns mJ µC A mJ Max. 1400 400 700 550 350 550 400 Typ. 1200 300 600 400 250 450 300 525 190 Min. Test Conditions IC = 800A VGE = ±15V VCE = 900V R G(ON) = RG(OFF) = 2.2Ω L ~ 100nH IF = 800A, VR = 50% VCES , dIF/dt = 3000A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Symbol t d(off) tf EOFF td(on) tr EON Q rr Irr EREC

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.5/10 www.dynexsemi.com TYPICAL CHARACTERISTICS 200 400 600 1200 1400 1600 Collector-emitter voltage, Vce - (V) Collector current, Ic - (A) Vge = 20/15/12/10V Common emitter Tcase = 25˚C 1000 800 Fig.3 Typical output characteristics Fig.4 Typical output characteristics 200 400 600 1200 1400 1600 Collector-emitter voltage, Vce - (V) Collector current, Ic - (A) Vge = 20/15/12/10V Common emitter Tcase = 125˚C 1000 800 Fig.5 Typical switching energy vs collector current 08 0 0100 200 Collector current, IC - (A) 100 700Turn-on energy, EON - (mJ) Tcase = 125˚C VGE = ±15V VCE = 800V R g = 2.2 Ohm Ω EOFF EON EREC 200 300 400 500 600 1000 800 900 300 400 500 600 700 Fig.6 Typical switching energy vs gate resistance 200 400 600 800 1000 1200 1400 012345678 9 10 Gate resistance, RG - (Ohms) Energy - (mJ) EON EOFF EREC Tcase = 125˚C VGE = ±15V VCE = 900V IC = 800A

6/10 Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. www.dynexsemi.com Fig.7 Diode typical forward characteristics 200 400 600 800 1000 1200 1400 1600 Fow ard voltage, VF - (V) Fow ard current, IF - (A) Tj = 125˚C Tj = 25˚C Fig.8 Reverse bias safe operating area 200 400 600 800 1000 1200 1400 1600 1800 2000 0 400 800 1200 1600 2000 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Tcase = 125˚C Vge = ±15V R g(min) = 2.2Ω Fig.9 Forward bias safe operating area 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) 50µs 100µs IC max. (single pulse) IC ma x. DC (continu ous) tp = 1ms Conditions: Tvj = 125˚C, Tcase = 80˚C 0.1 100 1 10 1000 100 10000 Pulse w idth, tp - (ms) Transient thermal impedance, Zth (j-c) - (°C/kW ) D iode Transistor Fig.10 Transient thermal impedance

Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. 7/10 www.dynexsemi.com Fig.11 3-Phase inverter operating frequency 400 600 800 1000 1200 1400 1600 1800 200 11 0 3 0 fma x - (kHz) Inverter phase current, IC(PK ) - (A) Con ditions: Tj = 125˚C, Tcase = 75˚C R g = 2.2Ω , VCC = 900V PWM Sine W ave Pow er Factor = 0.9, M odulation Index =1 Fig.12 DC current rating vs case temperature 200 400 600 800 1000 1200 1400 0 20 40 60 80 100 120 140 160 Case temperature, Tcase - (˚C) D C collector current, IC - (A)

8/10 Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our w ebsite or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherw ise. D O NOT SCA LE. 140 31.5 4x M 8 6x M 4 182613 11.5 3514 20 43.3 11.85 57 57 65 65 6x Ø 7 132416 Nominal w eight: 1050g Module outline type code: D

Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. 9/10 www.dynexsemi.com ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 H eatsink requirements for IGBT modules AN4505 Calculating the junction temperature of pow er semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN486 9 Principle of rating parallel connected IGBT modules AN5000 Short circuit w ithstand capability in IGBTs AN5167 D riving D ynex Semincoductor IGBT modules w ith Concept gate drivers AN5384 POWER ASSEMBLY CAPABILITY The Pow er Assembly group w as set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line w ith advances in device voltages and current capability of our semiconductors. W e offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assem bly group continues to offer high quality engineering support dedicated to designing new units to satisfy the grow ing needs of our customers. U sing the latest CAD methods our team of design and applications engineers aim to provide the Pow er Assembly Complete Solution (PACs). HEATSINKS The Pow er Assembly group has its ow n proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of D ynex semiconductors. D ata w ith respect to air natural, forced air and liquid cooling (w ith flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.

10/10 Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. www.dynexsemi.com C US TO M ER SERVICE CENTRE S Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and D istributors in many countries w orld-w ide. © D ynex Semiconductor 2001 Publication No. DS 5292-3 Issue No. 3.0 January 2001 TEC H NICAL D OC UM ENTATION – NOT FOR RE SALE. PRINTE D IN U NITED KINGD O M H EA DQU ARTER S OPERATION S DYNEX SEMICONDUCTOR LTD D oddington Road, Lincoln. Lincolnshire. LN6 3LF. U nited Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC.

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