GP800DCM18

GP800DCM18 DYNEX | Alldatasheet

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Technical content

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.1/10 www.dynexsemi.com

FEATURES

I High Thermal Cycling Capability I 800A Per Module I Non Punch Through Silicon I Isolated MMC Base with AlN Substrates

APPLICATIONS

I High Reliability Inverters I Motor Controllers I Traction Drives I Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800DCM18 is an1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As: GP800DCM18 Note: When ordering, please use the whole part number. KEY PARAMETERS VCES 1800V VCE(sat) (typ) 3.5V IC (max) 800A IC(PK) (max) 1600A GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 Fig. 1 Chopper switch circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: D (See package details for further information) 3(C1)4(E2)2(C2) 7(C1) 5(E1) 6(G1) 1(E1) GPxxxDCxxx-xxx

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting - M6 Electrical connections - M4 Electrical connections - M8 Parameter Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) Thermal resistance - case to heatsink (per module) Junction temperature Storage temperature range Screw torque THERMAL AND MECHANICAL RATINGS ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. T case = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Test Conditions VGE = 0V Tcase = 65˚C 1ms, Tcase = 100˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz Units V V A A W V Max. 1800 ±20 800 1600 6940 4000 Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Symbol R th(j-c) R th(j-c) R th(c-h) Tj Tstg Units ˚C/kW ˚C/kW ˚C/kW Nm Nm Nm Max. 150 125 125 Min. –40

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.3/10 www.dynexsemi.com Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES , Tcase = 125˚C VGE = ±20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125˚C DC t p = 1ms IF = 800A IF = 800A, Tcase = 125˚C VCE = 25V, VGE = 0V, f = 1MHz Parameter Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage Input capacitance Module inductance

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise. Symbol ICES IGES VGE(TH) VCE(sat) IF IFM VF C ies LM Units mA mA µA V V V A A V V nF nH Max. 6.5 800 1600 2.5 2.6 Typ. 5.5 3.5 4.3 2.2 2.3 Min. 4.5

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Units ns ns mJ ns ns mJ µC A mJ Max. 1200 300 300 400 300 300 240 Typ. 1000 200 200 300 200 200 180 450 120 Min. Test Conditions IC = 800A VGE = ±15V VCE = 900V R G(ON) = RG(OFF) = 2.2Ω L ~ 100nH IF = 800A, VR = 50% VCES , dIF/dt = 3500A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Q rr Irr EREC Tcase = 125˚C unless stated otherwise Units ns ns mJ ns ns mJ µC A mJ Max. 1400 350 400 550 350 450 400 Typ. 1200 250 300 400 250 350 300 525 190 Min. Test Conditions IC = 800A VGE = ±15V VCE = 900V R G(ON) = RG(OFF) = 2.2Ω L ~ 100nH IF = 800A, VR = 50% VCES , dIF/dt = 3000A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Symbol t d(off) tf EOFF td(on) tr EON Q rr Irr EREC

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.5/10 www.dynexsemi.com TYPICAL CHARACTERISTICS 200 400 600 1200 1400 1600 Collector-emitter voltage, Vce - (V) Collector current, Ic - (A) Vge = 20/15/12V Common emitter Tcase = 25˚C 1000 800 Vge = 10V Fig.3 Typical output characteristics Fig.4 Typical output characteristics 200 400 600 1200 1400 1600 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Vge = 20/15/12V Common emitter Tcase = 125˚C 1000 800 Vge = 10V Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance 08 0 0100 200 Collector current, IC - (A) 350Energy - (mJ) Tcase = 125˚C VGE = ±15V VCE = 900V R g = 2.2Ω EO FF EON EREC 100 150 200 250 300 300 400 500 600 700 100 200 300 400 500 600 700 0123456789 1 0 Gate resistance, RG - (O hms) Energy - (mJ) EON EO FF EREC Tcase = 125˚C VGE = ±15V VCE = 900V IC = 800A

6/10 Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. www.dynexsemi.com Fig.7 Diode typical forward characteristics 200 400 600 800 1000 1200 1400 1600 Fow ard voltage, VF - (V) Fow ard current, IF - (A) Tj = 125˚C Tj = 25˚C Fig.8 Reverse bias safe operating area 200 400 600 800 1000 1200 1400 1600 1800 2000 0 400 800 1200 1600 2000 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Tcase = 125˚C Vge = ±15V R g(min) = 2.2Ω Fig.9 Forward bias safe operating area Fig.10 Transient thermal impedance 0.1 100 1 10 1000 100 10000 Pulse w idth, tp - (ms) Transient thermal impedance, Zth (j-c) - (°C/kW ) D iode Transistor 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) 50 µs100 µs IC max. (single pulse) IC ma x. DC (continuous) tp = 1ms Conditions: Tvj = 125˚C, Tcase = 50˚C

Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. 7/10 www.dynexsemi.com Fig.11 DC current rating vs case temperature 200 400 600 1000 800 1200 1400 1600 0 20 40 60 80 100 120 140 160 Case temperature, T case - (˚C) D C collector current, IC - (A)

8/10 Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. www.dynexsemi.com PACKAGE DETAILS For further package information, please visit our w ebsite or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherw ise. DO NO T SCA LE. N ominal w eight: 1000g Module outline type code: D

Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. 9/10 www.dynexsemi.com ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions A N 4502 An introduction to IGBTs A N 4503 IGBT ratings and characteristics A N 4504 H eatsink requirements for IGBT modules A N 4505 Calculating the junction temperature of pow er semiconductors A N 4506 Gate drive considerations to maximise IGBT efficiency A N 4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN 4508 Guidance notes for formulating technical enquiries A N 4869 Principle of rating parallel connected IGBT modules A N 5000 Short circuit w ithstand capability in IGBTs A N 5167 D riving D ynex Semincoductor IGBT modules w ith Concept gate drivers A N 5384 POWER ASSEMBLY CAPABILITY The Pow er Assembly group w as set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line w ith advances in device voltages and current capability of our semiconductors. W e offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assem bly group continues to offer high quality engineering support dedicated to designing new units to satisfy the grow ing needs of our customers. U sing the latest CAD methods our team of design and applications engineers aim to provide the Pow er Assembly Complete Solution (PACs). HEATSINKS The Pow er Assembly group has its ow n proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of D ynex semiconductors. D ata w ith respect to air natural, forced air and liquid cooling (w ith flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.

10/10 Caution: This device is sensitive to electrostatic discharge. U sers should follow ESD handling procedures. www.dynexsemi.com C US TOM ER SERVICE CE N TRE S Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES O FFICE S Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and D istributors in many countries w orld-w ide. © D ynex Semiconductor 2001 Publication N o. DS 5363-3 Issue N o. 3.0 January 2001 TEC HN ICAL DO C UM EN TATION – NO T FO R RESALE. PRIN TE D IN UN ITED KIN G DOM H EA DQU ARTER S OP ERATI ONS DYNEX SEMICONDUCTOR LTD D oddington Road, Lincoln. Lincolnshire. LN 6 3LF. U nited Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC.

99 Bank Street, Suite 410,

O ttaw a, O ntarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYN EX (39639) This publication is issued to provide information only w hich (unless agreed by the Company in w riting) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. N o w arranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter w ithout prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use w ill be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products w hose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, w hich are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective ow ners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: D ynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follow s:- Target Information: This is the most tentative form of information and represents a very preliminary specification. N o actual design w ork on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is w ell in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.