GP400DDM12

GP400DDM12 DYNEX | Alldatasheet

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Technical content

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.1/9 www.dynexsemi.com

FEATURES

I High Thermal Cycling Capability I 400A Per Switch I Non Punch Through Silicon I Isolated MMC Base with AlN Substrates

APPLICATIONS

I High Reliability Inverters I Motor Controllers I Traction Drives I Resonant Converters The Powerline range of high power modules includes half bridge, dual, chopper and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP400DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As: GP400DDM12 Note: When ordering, please use the whole part number. KEY PARAMETERS VCES 1200V VCE(sat) (typ) 2.7V IC (max) 400A IC(PK) (max) 800A GP400DDM12 Dual Switch IGBT Module Advance Information DS5503-1.0 October 2001 Fig. 1 Dual switch circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: D (See package details for further information) 2412 3(C1) 5(E1) 6(G1) 7(C1) 12(C2) 11(G2) 10(E2) 1(E1) 4(E2) 2(C2)

29 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Mounting - M6 Electrical connections - M4 Electrical connections - M8 Parameter Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) Thermal resistance - case to heatsink (per module) Junction temperature Storage temperature range Screw torque THERMAL AND MECHANICAL RATINGS ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. T case = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Test Conditions VGE = 0V Tcase = 80˚C 1ms, Tcase = 105˚C Tcase = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz Units V V A A W V Max. 1200 ±20 400 800 3470 4000 Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Symbol R th(j-c) R th(j-c) R th(c-h) Tj Tstg Units ˚C/kW ˚C/kW ˚C/kW Nm Nm Nm Max. 150 125 125 Min. –40

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.3/9 www.dynexsemi.com Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES , Tcase = 125˚C VGE = ±20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125˚C DC, Tcase = 50˚C tp = 1ms IF = 800A IF = 800A, Tcase = 125˚C VCE = 25V, VGE = 0V, f = 1MHz Parameter Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage Input capacitance Module inductance

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise. Symbol ICES IGES VGE(TH) VCE(sat) IF IFM VF C ies LM Units mA mA µA V V V A A V V nF nH Max. 7.5 3.5 400 800 2.5 2.5 Typ. 5.5 2.7 3.2 2.2 2.3 Min. 4.5

49 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Units ns ns mJ ns ns mJ µC Max. Typ. 800 110 700 170 Min. Test Conditions IC = 400A VGE = ±15V VCE = 600V R G(ON) = RG(OFF) = 4.7Ω L ~ 100nH IF = 400A, VR = 50% VCES , dIF/dt = 2000A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Tcase = 25˚C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Q rr Tcase = 125˚C unless stated otherwise Units ns ns mJ ns ns mJ µC Max. Typ. 1000 150 800 300 Min. Test Conditions IC = 400A VGE = ±15V VCE = 600V R G(ON) = RG(OFF) = 4.7Ω L ~ 100nH IF = 400A, VR = 50% VCES , dIF/dt = 2000A/µs Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Symbol t d(off) tf EOFF td(on) tr EON Q rr

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.5/9 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance 100 200 300 600 700 800 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Vge = 20/15/12/10V Common emitter Tcase = 25˚C 500 400 100 200 300 600 700 800 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Vge = 20/15/12/10V Common emitter Tcase = 125˚C 500 400 0 100 200 300 400 500 Collector current, IC - (A) Switching energy - (mJ) Eoff Eon Conditions: Vce = 600V Tc = 125°C Rg = 4.7Ω 100 140 120 160 Gate Resistance, Rg - (Ohms) Switching energy, Esw - (mJ) 048 1 2 1 6 Conditions: Vce = 900V IC = 400A Tc = 125°C Eoff Eon

69 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area Fig.9 Forward bias safe operating area Fig.10 Transient thermal impedance 100 200 300 400 500 600 700 800 0 0.5 1 1.5 2 2.5 3 3.5 Forward voltage, V F - (V) Forward current, IF - (A) Tj = 125˚CTj = 25˚C 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Tcase = 125˚C Vge = ±15V R g = 4.7Ω* *Recommended minimum value 100 1000 10000 1 10 100 1000 10000 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) tp = 50µs tp = 100µs IC max. (single pulse) IC ma x. DC (continuous) tp = 1ms 0.1 100 1 10 1000 100 10000 Pulse width, tp - (ms) Transient thermal impedance, Zth (j-c) - (°C/kW ) Diode Transistor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.7/9 www.dynexsemi.com Fig.11 DC current rating vs case temperature 100 200 300 400 500 600 700 0 20 40 60 80 100 120 140 160 Case temperature, Tcase - (˚C) DC collector current, IC - (A)

89 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 140 31.5 4x M 8 6x M 4 182613 11.5 3514 20 43.3 11.85 57 57 65 65 6x Ø 7 132416 M ain Terminal screw plastic hole depth (M 8) = 16.8 ± 0.3 Auxiliary and Gate pin plastic hole depth (M 4) = 9/nobreakspace± 0.3 Copper terminal thickness, M ain Terminal pins = 1.5 ± 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 N ominal weight: 1050g Module outline type code: D PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO N OT SCA LE.

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.9/9 www.dynexsemi.com CUSTO M ER SERVICE CE N TRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SA LES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication N o. DS5503-1 Issue N o. 1.0 October 2001 TEC HN ICAL DOCU M EN TATION – N OT FOR RESA LE. PRIN TED IN UN ITED KIN GDO M H EAD Q UARTERS O PERATIO N S DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN 6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC.

99 Bank Street, Suite 410,

Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYN EX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. N o warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. N o actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.