GP250MHB06S

GP250MHB06S DYNEX | Alldatasheet

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.1/10 www.dynexsemi.com KEY PARAMETERS VCES 600V VCE(sat) (typ) 2.2V IC25 (max) 350A IC75 (max) 250A IC(PK) (max) 700A

FEATURES

I Low Forward Voltage Drop I Isolated Base

APPLICATIONS

The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP250MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems.

ORDERING INFORMATION

Order as: GP250MHB06S Note: When ordering, use complete part number. GP250MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4325 - 5.0 DS4325-6.0 October 2001 1 2 311 3(C1)2(E2)1(E1C 2) 11(C2) 9(C1) 6(G2) 7(E2) 5(E1) 4(G1) Fig. 1 Half bridge circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: M (See package details for further information)

2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com THERMAL AND MECHANICAL RATINGS Symbol Conditions DC junction to case per arm oC/kW100 Max. Min.Parameter Units R th(j-c) Thermal resistance - transistor Tstg Storage temperature range Transistor oC150 125 - 40 R th(c-h) Thermal resistance - Case to heatsink (per module)Mounting torque 5Nm (with mounting grease) 15- - Mounting - M6 Nm 5- oC/kW Tj Junction temperature oC Screw torque Diode oC125- Electrical connections - M6 Nm 5- Thermal resistance - diode DC junction to case oC/kW250--R th(j-c) VCES Collector-emitter voltage DC, Tcase = 25˚C 1ms, Tcase = 25˚C 350 A Test ConditionsSymbol IC Gate-emitter voltage VGE = 0V 600 Units V±20 700 Max.Parameter Collector current 1250Maximum power dissipationPmax Commoned terminals to base plate. AC RMS, 1 min, 50Hz Isolation voltageVisol V2500 V VGES A IC(PK) W(Transistor) DC, Tcase = 75˚C 250 A 1ms, Tcase = 75˚C A 500 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.3/10 www.dynexsemi.com C ies Input capacitance V CE = 25V, VGE = 0V, f = 1MHz - 27000-p F IF Diode forward current IFM Diode maximum forward current DC tp = 1ms A 250 500 VF Diode forward voltage I F = 250A, 1.9 1.1- A V IF = 250A, Tj = 125˚C 1.8 1.05- V

ELECTRICAL CHARACTERISTICS

VGE = 0V, VCE = VCES VGE = ±20V, VCE = 0V mA15 Max. Typ. Min. Parameter Tj = 25˚C unless stated otherwise. V7.5 2.72.2- Gate threshold voltage VGE = 15V, IC = 250A -4IC = 10mA, VGE = VCE Units ICES µA VGE(TH) V 2.82.3-VGE = 15V, IC = 250A, Tj = 125˚C V VCE(SAT) Collector-emitter saturation voltage VGE = 0V, VCE = VCES , Tj = 125˚C mA 50--

4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com INDUCTIVE SWITCHING CHARACTERISTICS Tj = 25˚C unless stated otherwise Symbol td(off) Turn-off delay time Fall time EOFF Turn-off energy loss Conditions ns ns mJ -20 310 Parameter Min. Typ. Max. Units 810 tf td(on) Turn-on delay time ns-- 330 Rise time EON Turn-on energy loss ns mJ -12 130 -tr IC = 250A VGE = ±15V VCE = 50% VCES R G(ON) = RG(OFF) = 5Ω L ~ 100nH Tj = 125˚C unless stated otherwise. trr Diode reverse recovery time ns-165- Q rr Diode reverse recovery charge µC-15- IF = 250A VR = 50%VCES , dIF/dt = 1500A/µs td(off) Turn-off delay time Fall time EOFF Turn-off energy loss ns ns mJ -30 450 1050 tf td(on) Turn-on delay time ns-- 380 Rise time EON Turn-on energy loss ns mJ -18 160 -tr IC = 250A VGE = ±15V VCE = 50% VCES R G(ON) = RG(OFF) = 5Ω L ~ 200nH trr Diode reverse recovery time ns-230- Q rr Diode reverse recovery charge µC-23- IF = 250A VR = 50%VCES , dIF/dt = 1500A/µs

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.5/10 www.dynexsemi.com TYPICAL CHARACTERISTICS Fig.3 Typical output characteristics Fig.4 Typical output characteristics Fig.5 Typical turn-on energy vs collector current Fig.6 Typical turn-on energy vs collector current 100 150 200 250 300 450 500 Collector-emitter voltage, Vce - (V) Collector current, Ic - (A) Vge = 20/15V Common emitter Tcase = 125˚C 400 350 Vge = 12V Vge = 10V 0 300 100 150 Collector current, IC - (A) 10.0 30.0Turn-on energy, EON - (mJ) Tj = 25˚C VGE = ±15V VCE = 300V A: Rg = 15Ω B: Rg = 10Ω C: Rg = 5Ω A B C 17.5 20.0 12.5 15.0 22.5 25.0 27.5 2.5 5.0 7.5 200 25050 03 0 0 100 150 Collector current, IC - (A) 10.0 30.0Turn-on energy, EON - (mJ) Tj = 125˚C VGE = ±15V VCE = 300V A: Rg = 15Ω B: Rg = 10Ω C: Rg = 5Ω A B C17.5 20.0 12.5 15.0 22.5 25.0 27.5 2.5 5.0 7.5 200 25050 100 150 200 250 300 450 500 Collector-emitter voltage, Vce - (V) Collector current, Ic - (A) Vge = 20/15V Common emitter Tcase = 25˚C 400 350 Vge = 12V Vge = 10V

6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig.7 Typical turn-off energy vs collector current Fig.8 Typical turn-off energy vs collector current Fig.10 Typical diode turn-off energy vs collector currentFig.9 Typical diode turn-off energy vs collector current 0 300 100 150 Collector current, IC - (A) Turn-off energy, EOFF - (mJ) Tj = 25˚C VGE = ±15V VCE = 300V A: Rg = 15Ω B: Rg = 10Ω C: Rg = 5Ω A B C20 200 25050 0 300 100 150 Collector current, IC - (A) Turn-off energy, EOFF - (mJ) Tj = 125˚C VGE = ±15V VCE = 300V A: Rg = 15Ω B: Rg = 10Ω C: Rg = 5Ω A B C 200 25050 0 300 100 150 200 250 Collector current, IC - (A) Diode turn-off energy, EOFF(diode) - (mJ) Tj = 25˚C VGE = ±15V VCE = 300V R g = 5Ω R g = 10Ω R g = 15Ω 50 0 300 100 150 200 250 Collector current, IC - (A) Diode turn-off energy, EOFF(diode) - (mJ) Tj = 125˚C VGE = ±15V VCE = 300V R g = 5Ω R g = 10Ω R g = 15Ω

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.7/10 www.dynexsemi.com Fig.11 Typical switching characteristics Fig.13 Reverse bias safe operating area Fig.14 Forward bias safe operating area (DC and single pulse) Fig.12 Diode typical forward characteristics 0 200 100 150 Collector current, IC - (A) 800 1400Switching times, - (ns) Tj = 125˚C VGE = ±15V VCE = 300V R g = 5Ω tf td(off) tr td(on) 1200 1000 200 600 400 250 30050 100 125 150 175 200 225 250 Foward voltage, VF - (V) Foward current, IF - (A) Tj = 125˚C Tj = 25˚C 100 200 300 400 500 600 0 200 400 600 800 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) Tj = 125˚C Vge = ±15V R g = 5Ω 1 100 1000 10000 1 10 100 1000 Collector-emitter voltage, Vce - (V) Collector current, IC - (A) 50µs 100µs IC max. (single pulse) IC max. DC (continuous)tp = 1ms

8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Fig.15 Transient thermal impedance 100 1000 0.001 0.01 1 0.1 10 Pulse width, tp - (s) Transient thermal impedance, Zth (j-c) - (°C/kW ) Diode Transistor

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.9/10 www.dynexsemi.com PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 106 ± 0.8 108 ± 0.8 3x M6 93 ± 0.3 48 ± 0.3 62 ± 0.8 4x Fast on tabs 28 ± 0.5 28 ± 0.5 38max 2 310 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M

10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4325-6 Issue No. 6.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC.

99 Bank Street, Suite 410,

Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.